BAT 70-05
Semiconductor Group
Jun-02-1998
1
Silicon Schottky Diodes
Parallel connection for maximum
I
F
per package
Low forward voltage drop
For power supply
For clamping and protection
VPS05163
1
2
3
4
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Ordering Code
Pin Configuration
Package
BAT 70-05
BAT 70-05
Q62702-A1223
1 = A1 2 n.c.
SOT-223
3 = A2 4=C1/C2
Maximum Ratings
Parameter
Value
Symbol
Unit
Reverse voltage,
T
S
< 75C
1)
V
R
V
50
70
V
R
Reverse voltage,
T
S
< 50C
1)
Peak reverse voltage,
T
S
< 70C, t < 10ms
2)
70
V
RM
Forward current
I
F
1.5
A
Average forward current (50/60Hz, sinus)
1.5
I
FAV
Surge forward current (t
<
100
s)
I
FSM
5
Total power dissipation,
T
S
130 C
P
tot
1.5
W
Total power dissipation, both diodes,
T
S
120 C
P
tot
3
Junction temperature
T
j
150
C
Storage temperature
T
stg
- 65 ...+150
Maximum Ratings
Junction - ambient
1)
R
thJA
82
K/W
Junction - soldering point
R
thJS
12
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm
2
Cu
2) see DC/pulse derating curve
V
R
=
f (T
A
)
Semiconductor Group
1
1998-11-01
BAT 70-05
Semiconductor Group
Jun-02-1998
2
Electrical Characteristics at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
Unit
Values
typ.
max.
min.
DC characteristics
Reverse current
V
R
= 50 V
V
R
= 70 V
I
R
100
1000
A
10
60
-
-
Reverse current
V
R
= 50 V,
T
A
= 75 C
I
R
-
1
15
mA
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 1.5 A
V
F
-
-
-
-
0.2
0.26
0.33
0.52
-
-
-
0.6
V
AC characteristics
Diode capacitance
V
R
= 0 V,
f = 1 MHz
V
R
= 10 V,
f = 1 MHz
C
T
-
-
236
48.8
-
-
pF
Forward voltage
V
F
=
f (T
A
)
for
tp = 10ms and 100ms, Duty cycle
< 1/100
0
20
40
60
80
100
120 C
150
T
A
0
10
20
30
40
50
60
V
80
V
R
t
p
=DC
t
p
=100ms
t
p
=10ms
Semiconductor Group
2
1998-11-01
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