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Электронный компонент: Q62702-A3466

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BAS 28W
Semiconductor Group
Mar-16-1998
1
Silicon Switching Diode Array
For high-speed switching applications
Electrical insulated diodes
VPS05605
4
2
1
3
Type
Marking Ordering Code
Pin Configuration
Package
BAS 28W
JTs
Q62702-A3466
1 = C1 2 = C2 3 = A2
SOT-343
4 = A1
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
V
R
V
75
Peak reverse voltage
85
V
RM
200
Forward current
I
F
mA
A
I
FS
Surge forward current, t = 1
s
4.5
Total power dissipation,
T
S
= 103 C
mW
250
P
tot
150
Junction temperature
C
T
j
Storage temperature
T
stg
- 65 ...+150
Thermal Resistance
Junction - ambient
1)
R
thJA
460
K/W
Junction - soldering point
R
thJS
190
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
1
1998-11-01
BAS 28W
Semiconductor Group
Mar-16-1998
2
Electrical Characteristics at
T
A
= 25C, unless otherwise specified.
Parameter
Values
Symbol
Unit
max.
typ.
min.
DC characteristics
V
V
(BR)
Breakdown voltage
I
(BR)
= 10 A
-
-
85
mV
Forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
-
-
-
-
-
-
-
-
V
F
715
855
1000
1250
A
Reverse current
V
R
= 75 V
I
R
1
-
-
Reverse current
V
R
= 25 V,
T
A
= 150 C
V
R
= 75 V,
T
A
= 150 C
I
R
-
-
-
-
30
50
AC characteristics
pF
Diode capacitance
V
R
= 0 V,
f
= 1 MHz
-
2
-
C
D
Reverse recovery time
I
F
= 10 mA,
I
R
= 10 mA,
R
L
= 100
,
measured at
I
R
= 1mA
t
rr
-
ns
-
6
Test circuit for reverse recovery time
EHN00019
F
D.U.T.
Oscillograph
Pulse generator:
t
p
= 100ns,
D = 0.05,
t
r
= 0.6ns,
R
i
= 50
Oscillograph:
R = 50
,
t
r
= 0.35ns,
C
1pF
Semiconductor Group
2
1998-11-01
BAS 28W
Semiconductor Group
Mar-16-1998
3
Forward current
I
F
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
5
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
50
100
150
200
mA
300

I
F
Forward current
I
F
=
f V
F
)
T
A
= 25C
0
0
EHB00035
BAS 28
0.5
1.0
V
1.5
50
100
mA
150
F
F
V
max
typ
Permissible Pulse Load
R
thJS
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
I
Fmax
/
I
FDC
=
f(t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
-

I
Fmax
/
I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
BAS 28W
Semiconductor Group
Mar-16-1998
4
Reverse current
I
R
=
f (T
A
)
10
10
10
0
50
100
150
BAS 28
EHB00034
nA
T
A
R
C
10
10
5
4
3
2
1
5
5
5
25 V
70 V
max.
= 70 V
R
V
typ.
Forward voltage
V
F
=
f (T
A
)
0
0.5
1.0
0
50
100
150
BAS 28
EHB00037
V
T
A
V
F
C
F
= 100 mA
10 mA
1 mA
0.1 mA
Semiconductor Group
4
1998-11-01