SMBTA 06M
Semiconductor Group
Jun-08-1998
1
NPN Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA 56M (PNP)
VPW05980
1
2
3
5
4
Type
Marking
Pin Configuration
Ordering Code
Package
4=n.c. 5 = C
s1G
Q62702-A3473
1 = B 2 = C 3 = E
SCT-595
SMBTA 06M
Maximum Ratings
Parameter
Symbol
Unit
Value
V
V
CEO
80
Collector-emitter voltage
Collector-base voltage
V
CBO
80
Emitter-base voltage
V
EBO
4
DC collector current
I
C
500
mA
Peak collector current
I
CM
1
A
Base current
I
B
100
mA
Peak base current
I
BM
200
P
tot
1
W
Total power dissipation,
T
S
95 C
C
150
Junction temperature
T
j
Storage temperature
T
stg
- 65...+150
Thermal Resistance
Junction ambient
1)
R
thJA
110
K/W
Junction - soldering point
R
thJS
55
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
Semiconductor Group
1
1998-11-01
SMBTA 06M
Semiconductor Group
Jun-08-1998
2
Electrical Characteristics at
T
A
=25C, unless otherwise specified
Parameter
Values
Symbol
Unit
min.
typ.
max.
DC Characteristics
V
-
V
(BR)CEO
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
-
80
Collector-base breakdown voltage
I
C
= 100 A,
I
B
= 0
V
(BR)CBO
-
-
80
V
(BR)EBO
4
-
-
Emitter-base breakdown voltage
I
E
= 10 A,
I
C
= 0
V
Collector cutoff current
V
CB
= 80 V,
I
E
= 0
I
CBO
-
-
100
nA
A
I
CBO
-
20
-
Collector cutoff current
V
CB
= 80 V,
I
E
= 0 ,
T
A
= 150 C
Collector cutoff current
V
CE
= 60 V,
I
B
= 0
-
nA
100
-
I
CEO
DC current gain 1)
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
h
FE
100
100
-
-
-
-
-
V
Collector-emitter saturation voltage1)
I
C
= 100 mA,
I
B
= 10 mA
-
0.25
-
V
CEsat
-
1.2
Base-emitter voltage 1)
I
C
= 100 mA,
V
CE
= 1 V
V
BE(ON)
-
V
AC Characteristics
-
100
-
Transition frequency
I
C
= 20 mA,
V
CE
= 5 V,
f = 100 MHz
f
T
MHz
-
Collector-base capacitance
V
CB
= 10 V,
f = 1 MHz
5
-
pF
C
cb
1) Pulse test: t < 300
s; D < 2%
Semiconductor Group
2
1998-11-01
SMBTA 06M
Semiconductor Group
Jun-08-1998
3
Total power dissipation
P
tot
=
f (T
A
*;
T
S
)
* Package mounted on epoxy
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mW
1200
P
tot
T
S
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mW
1200
P
tot
T
A
0
20
40
60
80
100
120 C
150
T
A
,T
S
0
200
400
600
800
mW
1200
P
tot
Permissible Pulse Load
R
thJS
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
P
totmax
/
P
totDC
=
f (t
p
)
10
-6
10
-5
10
-4
10
-3
10
-2
10
0
s
t
p
0
10
1
10
2
10
3
10
-
P
totmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Semiconductor Group
3
1998-11-01
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