Semiconductor Group
1
BA 592
Silicon RF Switching Diode
BA 592
Preliminary Data
q
For VHF band switching
in TV/VTR tuners
q
Low forward resistance,
small capacitance,
small inductance
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
Pin Configuration
BA 592
Q62702-A950
blue S
SOD-323
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
35
V
Forward current
I
F
100
mA
Operating temperature range
T
op
55 ... + 125
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
450
K/W
10.94
Semiconductor Group
2
BA 592
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Parameter
Symbol
min.
typ.
Unit
Values
max.
Forward voltage
I
F
= 100 mA
V
F
V
1
Reverse current
V
R
= 20 V
I
R
nA
20
Diode capacitance
f
= 1 MHz
V
R
= 1 V
V
R
= 3 V
C
T
pF
0.6
0.92
0.85
1.4
1.1
Forward resistance
f
= 100 MHz
I
F
= 3 mA
I
F
= 10 mA
r
f
0.45
0.36
0.7
0.5
Reverse resistance
V
R
= 1 V,
f
= 100 MHz
1/g
p
K
100
Series inductance
L
S
nH
2
Diode capacitance
C
T
=
f
(
V
R
)
f
= 1 MHz
Forward resistance
r
f
=
f
(
I
F
)
f
= 100 MHz
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