Semiconductor Group
1
05.96
Silicon Schottky Diode
BAT 65
Type
Marking
Ordering Code
Pin Configuration
Package
1)
1
2
BAT 65
White/C
Q62702-A990
C
A
SOD-123
1)
Dimensions see page 313.
Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Reverse voltage
V
R
40
V
Forward current
I
F
750
mA
Average forward current,
f
= 50 Hz
I
FAV
500
mA
Surage forward current,
t
10 ms
I
FSM
2.5
A
Total power dissipation,
T
S
100
C
P
tot
600
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-
55 ... + 150
C
Features
Low-power Schottky rectifier diode
For low-loss, fast-recovery rectification,
meter protection, bias isolation and
clamping purposes
Miniature plastic package for surface
mounting (SMD)
BAT 65
Semiconductor Group
2
Thermal Resistance
Parameter
Symbol
Limit Values
Unit
Junction - soldering point
R
thJS
80
K/W
Junction to ambient
1)
R
thJA
150
K/W
1)
Package mounted on epoxy PCB 40 mm
40 mm
1.5 mm/6 cm
2
Cu.
Electrical Characteristics
T
A
= 25
C, unless otherwise specified.
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
Reverse current
V
R
= 30 V
V
R
= 30 V,
T
A
= 65
C
I
R
50
900
A
Forward voltage
I
F
= 10 mA
I
F
= 100 mA
I
F
= 250 mA
I
F
= 750 mA
V
F
0.305
0.38
0.44
0.580
0.40
0.70
V
Diode capacitance
V
R
= 10 V,
f
= 1 MHz
C
T
8.4
12
pF
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