Semiconductor Group
1
BB 512
Silicon Variable Capacitance Diode
BB 512
q
For AM tuning applications
q
Specified tuning range 1 ... 8 V
Maximum Ratings
Type
Ordering Code
(tape and reel)
Marking
Package
Pin Configuration
1
2
BB 512
Q62702-B479
white M
SOD-123
C
A
V
RM
Reverse voltage (
R
10 k
)
15
Parameter
Symbol
Values
Unit
Reverse voltage
V
R
12
V
Forward current,
T
A
60 C
I
F
50
mA
Operating temperature range
T
op
55 ... + 150
C
Storage temperature range
T
stg
55 ... + 150
Thermal Resistance
Junction - ambient
R
th JA
600
K/W
10.94
Semiconductor Group
2
BB 512
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
Reverse current
V
R
= 10 V
V
R
= 10 V,
T
A
= 60 C
I
R
nA
20
200
Diode capacitance,
f
= 1 MHz
V
R
= 1 V
V
R
= 8 V
C
T
pF
440
17.5
470
520
34
Figure of merit
f
= 0.5 MHz,
V
R
= 1 V
Q
480
Capacitance ratio
V
R
= 1 V, 8 V
C
T1
C
T8
15
Series resistance
f
= 0.5 MHz,
V
R
= 1 V
r
s
1.4
Temperature coefficient of diode capacitance
f
= 1 MHz,
V
R
= 1 V
TC
C
ppm/K
500
Capacitance matching
V
R
= 1 ... 8 V
C
T
C
T
%
3
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