Silicon N Channel MOSFET Triode
BF 987
q
For high-frequency stages up to 300 MHz,
preferably in FM applications
q
High overload capability
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BF 987
Q62702-F35
TO-92
1
2
3
D
S
G
Ordering Code
Parameter
Symbol
Values
Unit
Drain-source voltage
V
DS
20
V
Thermal Resistance
Junction - ambient
R
th JA
350
K/W
Total power dissipation,
T
A
45 C
P
tot
300
mW
Storage temperature range
T
stg
55 ... + 150
C
Gate-source peak current
I
GSM
10
Channel temperature
T
ch
150
mA
Drain current
I
D
30
1)
For detailed information see chapter Package Outlines.
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Drain-source breakdown voltage
I
D
= 10
A,
V
GS
= 4 V
V
(BR) DS
20
nA
Gate-source leakage current
V
GS
= 5 V,
V
DS
= 0
I
GSS
50
Gate-source breakdown voltage
I
GS
= 10 mA,
V
DS
= 0
V
(BR) GSS
6.5
12
V
Gate-source pinch-off voltage
V
DS
= 10 V,
I
D
= 20
A
V
GS (p)
2.5
mA
Drain current
V
DS
= 10 V,
V
GS
= 0
I
DSS
5
18
mS
Forward transconductance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 1 kHz
g
fs
14
16
pF
Output capacitance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 1 MHz
C
dss
1
Noise figure (test circuit)
V
DS
= 10 V,
I
D
= 10 mA ,
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS
F
1
pF
Gate input capacitance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 1 MHz
C
gss
2.7
fF
Reverse transfer capacitance
V
DS
= 10 V,
I
D
= 10 mA,
f
= 1 MHz
C
dg
35
dB
Power gain (test circuit)
V
DS
= 10 V,
I
D
= 10 mA ,
f
= 200 MHz,
G
G
= 2 mS,
G
L
= 0.5 mS
G
p
25
BF 987
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