Semiconductor Group
1
NPN Silicon RF Transistor
BF 959
q
For SAW filter driver applications
in TV tuners
q
For linear broadband VHF amplifier
stages
q
For oscillator applications
Maximum Ratings
Type
Marking
Package
1)
Pin Configuration
BF 959
Q62702-F640
TO-92
1
2
3
C
E
B
Ordering Code
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V
CE0
20
V
Collector-base voltage
V
CB0
30
Emitter-base voltage
V
EB0
3
Thermal Resistance
Junction - ambient
R
th JA
250
K/W
Total power dissipation,
T
A
25 C
V
CE
15 V
P
tot
500
mW
Storage temperature range
T
stg
55 ... + 150
Peak base current
I
BM
30
Junction temperature
T
j
150
C
mA
Collector-emitter reverse voltage
V
CES
30
Peak collector current
I
CM
100
1)
For detailed information see chapter Package Outlines.
Semiconductor Group
2
BF 959
BF 959
Electrical Characteristics
at
T
A
= 25 C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC Characteristics
AC Characteristics
V
Collector-emitter breakdown voltage
I
C
= 1 mA
V
(BR) CE0
20
nA
Collector cutoff current
V
= 20 V
I
CB0
100
DC current gain,
V
CE
= 10 V
I
C
= 5 mA
I
C
= 20 mA
h
FE
35
40
85
Collector-base breakdown voltage
I
C
= 10
A
V
(BR) CB0
30
Emitter-base breakdown voltage
I
E
= 10
A
V
(BR) EB0
3
Collector-emitter saturation voltage
I
C
= 30 mA,
I
B
= 2 mA
V
CE sat
1
Base-emitter saturation voltage
I
C
= 30 mA,
I
B
= 2 mA
V
BE sat
0.95
V
Base-emitter voltage
I
C
= 20 mA,
V
CE
= 10 V
V
BE
0.75
MHz
Transition frequency
I
C
= 20 mA,
V
CE
= 10 V,
f
= 100 MHz
I
C
= 30 mA,
V
CE
= 5 V
f
T
700
600
1100
pF
Output capacitance
V
CB
= 10 V,
I
E
= 0,
f
= 1 MHz
C
obo
0.9
Collector-base capacitance
V
CE
= 10 V,
V
BE
= 0,
f
= 1 MHz
C
cb
0.75
mS
Output conductance
I
C
= 20 mA,
V
CE
= 10 V,
f
= 35 MHz
g
22e
0.06
dB
Noise figure
V
CE
= 10 V,
f
= 200 MHz,
R
S
= 60
I
C
= 5 mA
I
C
= 20 mA
F
3
4
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