CGY 0819
Siemens Aktiengesellschaft
1
16.09.98
HL HF PE GaAs 1 / Fo
GaAs MMIC
l
Tri mode power amplifier for AMPS/ CDMA /TDMA
portable cellular phones
l
Dual band operation
l
31.5 dBm saturated output power @ PAE=55% typ.
29 dBm linear output power@ PAE=40% typ.
l
Two independent amplifier chains
l
Power ramp control
l
Input matched to 50 ohms, simple output match
on PCB
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
CGY 0819
CGY 0819
Q62702G0076
MW 16
Maximum ratings
Characteristics
Symbol
max. Value
Unit
Positive supply voltage
VD
9
V
Supply current
ID
4
A
Channel temperature
TCh
150
C
Storage temperature
Tstg
-55...+150
C
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
PPulse
tbd
W
Total power dissipation
(Ts
80 C)
Ts: Temperature at soldering point
Ptot
tbd
W
Thermal Resistance
Characteristics
Symbol
max. Value
Unit
Channel-soldering point
RthChS
11
K/W
Semiconductor Group
1
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
2
16.09.98
HL HF PE GaAs 1 / Fo
Functional Block Diagram:
Pin Configuration:
Pin #
Name
Configuration
1
VD Cell
Drain voltage cell preamplifier stage
2
RF IN Cell
RF IN Cell Band
3
Vneg
Negative voltage
4
Vcon cell
Control voltage cell. PA
5
Vcon PCS
Control voltage PCS PA
6
Vneg
Negative voltage
7
RF IN PCS
RF IN PCS Band
8
VD PCS
Drain voltage PCS preamplifier stage
9
RF out PCS
RF out PCS
10
RF out PCS
RF out PCS
11
RF out PCS
RF out PCS
12
RF out PCS
RF out PCS
13
GND
RF Ground
14
RF out Cell
RF out Cell
15
RF out Cell
RF out Cell
16
RF out Cell
RF out Cell
Semiconductor Group
2
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
3
16.09.98
HL HF PE GaAs 1 / Fo
Electrical Characteristics
(TA = 25C , ZS=ZL=50 Ohm, VD=3.5V, IDq=300mA, unless otherwise specified )
Characteristics
Symbol
min
typ
max
Unit
Frequency range
Cellular frequency band
PCS frequency band
f
824
1850
849
1910
MHz
Duty cycle
t
ON
/t
OFF
100
%
AMPS output power
P
31,5
dBm
TDMA cellular output power
P
30
dBm
AMPS gain at max. output
G
24
dB
TDMA cellular gain at max. output
G
27
dB
TDMA PCS output power
P
29
dBm
TDMA PCS gain at max. output
G
24
dB
CDMA cellular output power
P
28
dBm
CDMA cellular gain at max. output
G
28
dB
CDMA PCS output power
P
29
dBm
CDMA PCS gain at max. output
G
24
dB
Power ramping characteristic
Full output power
Pinch off
V
contr
2.5
0.5
V
Adjacent Channel Power CDMA
900kHz offset (cellular band)
1.25 MHz offset (PCS band)
1.98 MHz offset
P
adj
/P
main
-45
45
-54
dBc @
30kHz
Adjacent channel power TDMA
adjacent
alternate
2nd alternate
P
adj
/P
main
-28
45
-45
dBc @
30kHz
AMPS efficiency
PAE
55
%
TDMA DC to RF efficiency
@Padj=-26dBc
at max. output
Cellular Band:
PCS Band
PAE
40
40
%
CDMA DC to RF efficiency
@Padj=-42dBc
at max. output
Cellular Band
PCS Band
at Pout=10 dBm ( Iq set to 100mA )
PAE
35
40
8
%
Semiconductor Group
3
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
4
16.09.98
HL HF PE GaAs 1 / Fo
Characteristics
Symbol
min
typ
max
Unit
Receive band noise power density
Cell band ( 869 to 894 MHz )
PCS band ( 1930 to 1990 MHz )
P
RX
-137
-145
dBm/Hz
DC supply voltage range
VD
3
3.5
4.0
V
Negative supply voltage range
Vneg
-5.0
-7
V
Standby current @Vcon=0V
I
pwr dwn
500
A
Quiescent current
I
Q
300
mA
Current consumption at V
Contr
I
Control
2
mA
Current consumption at V
NEG
I
NEG
2
mA
Operating temperature range
-30
+85
C
Power on sequence:
1. connect negative voltage to PA
2. connect control voltage to PA
3. turn on Vd
4. turn on Pin
To switch off the device please use reverse sequence.
Semiconductor Group
4
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
5
16.09.98
HL HF PE GaAs 1 / Fo
Application Circuit:
Evaluation Board Parts List
Part Type
Position
Description
Manufacturer
Part Number
Capacitor
C1
3.9pF 0403
Siemens
Capacitor
C2, C3, C6, C7,
C10, C16, C18
100pF 0402
Siemens
Capacitor
C4
5.6pF 0603 HQ
AVX
06035J5R6GBT
Capacitor
C5
10pF 0603 HQ
AVX
06035J100GBT
Capacitor
C8, C9, C11,
C19
10nF0402
Siemens
Capacitor
C12, C13, C14,
C15
1u0 1206
Capacitor
C17
3.9pF 0603 HQ
AVX
06035J3R9BBT
Capacitor
C20, C21
33nF 0402
Siemens
Capacitor
C22, C23
1nF 0402
Siemens
C19
10n
L4
8n2
C
1
3
p
9
CLK
L
1
1
0
u
H
68R
R3
Vsw
1
k
0
R
4
V3
BCP 72
10n
C11
RFin Cell
C
8
1
0
n
100p
C2
1
0
n
C
9
Vcon PCS
C10
100p
1
0
0
p
C
3
C
5
1
0
p
H
Q
5
p
6
H
Q
C
4
3
3
n
H
L
3
RFout Cel
C6
100p
RFout PCS
100p
C18
L
2
3
3
n
H
C
1
7
3
p
9
H
Q
IC1
CGY0819
16
RFout3Cell
10
RFout2PCS
9
RFout1PCS
11
RFout3PCS
17
GND (backside MW16)
2
RFinCell
4
VconCell
7
RFinPCS
8
VD1PCS
15
RFout2Cell
3
VnegCell
6
VnegPCS
12
RFout4PCS
13
GND
14
RFout1Cell
5
VconPCS
1
VD1Cell
C20
33n
R
2
3
k
9
1
u
0
C
1
5
C
1
4
1
u
0
1
u
0
C
1
3
C
1
2
1
u
0
RFin PCS
BC848B
V1
BAS 40-04
V2
3
2
1
Vaux
Vcon Cell
Vd
R
1
6
8
0
R
C23
1n0
3
3
n
C
2
1
C22
1n0
C
1
6
1
0
0
p
100p
C7
Semiconductor Group
5
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
6
16.09.98
HL HF PE GaAs 1 / Fo
Part Type
Position
Description
Manufacturer
Part Number
Inductor
L1
10uH
Siemens
Inductor
L2, L3
Air Coil 33nH
H. David GmbH
PN/BV 1250
Inductor
L4
8.2nH 0603
TOKO
Resistor
R1
680 Ohm 0402
Resistor
R2
3.9k 0402
Resistor
R3
68 Ohm 0805
Resistor
R4
1.0k 0402
Transistor
V1
BC848B
Siemens
Diode
V2
BAS40-04W
Siemens
Transistor
V3
BCP72
Siemens
IC
IC1
CGY0819
Siemens
Substrate
FR4,
h=0.2mm,
r
=4.5
Siemens
Evaluation Board:
Dual Band PA
PCS
Cellular
V
c
o
n
CLK
Vaux
V
s
w
V
d
V
c
o
n
C
G
Y
0
8
1
9
Siemens
CLK
Vsw
R
F
i
n
C
e
l
l
Vcon PCS
L3
R
F
o
u
t
C
e
l
l
L2
R
F
o
u
t
P
C
S
R
F
i
n
P
C
S
Vaux
Vcon Cell
Vd
IC1
V
1
R2
C
2
2
R
1
L
1
V
2
C23
C
2
1
C
2
0
R
3
R
4
C13
C15
C14
C12
C10
C16
C
1
7
C
1
8
C
4
C5
C
6
C
3
C2
L
4
C1
C
1
9
C
7
C11
C8
C9
V3
Semiconductor Group
6
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
7
16.09.98
HL HF PE GaAs 1 / Fo
Typical Performance in Cellular AMPS Operation Mode
AMPS Mode: PAE & Pout vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
5
10
15
20
25
30
35
-15 -13 -11
-9
-7
-5
-3
-1
1
3
5
7
Pin [dBm]
P
out [dB
m
]
0.00
10.00
20.00
30.00
40.00
50.00
60.00
70.00
PAE [
%
]
Pout [dBm]
PAE [%]
AMPS Mode: TG & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
10
20
30
40
50
60
-15 -13 -11
-9
-7
-5
-3
-1
1
3
5
7
Pin [dBm]
T
G
[d
B]
0
150
300
450
600
750
900
Id
[m
A]
TG [dB]
Id [mA]
AMPS Mode: Pout vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C
30
31
32
33
34
3
3.2
3.4
3.6
3.8
4
Vd [V]
P
out
[
d
B
m
]
AMPS Mode: PAE vs. Vd
Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25C
52
54
56
58
3
3.2
3.4
3.6
3.8
4
Vd [V]
PAE [%]
AMPS Mode: Pout vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C
31
31.2
31.4
31.6
31.8
32
32.2
32.4
32.6
32.8
33
820
825
830
835
840
845
850
f [MHz]
P
out
[
d
B
m
]
AMPS Mode: PAE vs. f
Iq=300mA, Vd=3.5V, Pin=8dBm, T=25C
52
53
54
55
56
57
58
820
825
830
835
840
845
850
f [MHz]
PAE [%]
Semiconductor Group
7
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
8
16.09.98
HL HF PE GaAs 1 / Fo
Typical Performance in Cellular CDMA Operation Mode:
CDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
5
10
15
20
25
30
35
40
-15
-13
-11
-9
-7
-5
-3
-1
1
3
Pin [dBm]
Po
u
t
[d
Bm], PAE [%]
0
100
200
300
400
500
600
700
800
Id
[m
A]
Pout [dBm]
PAE [%]
Id [mA]
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
10
20
30
40
50
60
70
14
16
18
20
22
24
26
28
30
Pout [dBm]
AC
PR
[d
Bc]
23
24
25
26
27
28
29
30
T
G
[d
B]
ACP885 [dBc]
ACP1,98 [dBc]
TG [dB]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
40
41
42
43
44
45
46
47
48
49
50
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
50
51
52
53
54
55
56
57
58
59
60
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
CDMA Mode: Gain vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
CDMA Mode: PAE vs. f
Vd=3,0V, Pout=27,5dBm, Iq=300mA
30
31
32
33
34
35
36
37
38
39
40
820
825
830
835
840
845
850
f [MHz]
PAE [%]
Semiconductor Group
8
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
9
16.09.98
HL HF PE GaAs 1 / Fo
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
40
41
42
43
44
45
46
47
48
49
50
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
C DMA Mode: AC PR @1,98MHz Offset vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
50
51
52
53
54
55
56
57
58
59
60
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
CDMA Mode: PAE vs. f
Vd=3,5V, Pout=28,5dBm, Iq=300mA
30
31
32
33
34
35
36
37
38
39
40
820
825
830
835
840
845
850
f [MHz]
PAE [%]
CDMA Mode: ACPR @885kHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
40
41
42
43
44
45
46
47
48
49
50
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
50
51
52
53
54
55
56
57
58
59
60
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
Semiconductor Group
9
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
10
16.09.98
HL HF PE GaAs 1 / Fo
CDMA Mode: Gain vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
CDMA Mode: PAE vs. f
Vd=4V, Pout=29,5dBm, Iq=300mA
30
31
32
33
34
35
36
37
38
39
40
820
825
830
835
840
845
850
f [MHz]
PAE [%]
Typical Performance in Cellular TDMA Operation Mode
TDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
5
10
15
20
25
30
35
40
45
-15
-13
-11
-9
-7
-5
-3
-1
1
3
5
Pin [dBm]
Po
u
t
[d
Bm], PAE [%]
0
100
200
300
400
500
600
700
800
900
Id
[m
A]
Pout [dBm]
PAE [%]
Id [mA]
TDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25C
0
10
20
30
40
50
60
70
80
14
16
18
20
22
24
26
28
30
Pout [dBm]
AC
PR
[d
Bc]
22
23
24
25
26
27
28
29
30
T
G
[d
B]
Padj [dBc]
Palt [dBc]
TG [dB]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
25
26
27
28
29
30
31
32
33
34
35
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=29dBm, Iq=300mA
45
46
47
48
49
50
51
52
53
54
55
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
Semiconductor Group
10
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
11
16.09.98
HL HF PE GaAs 1 / Fo
TDMA Mode: Gain vs. f
Vd=3V, Pout=29dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
TDMA Mode: PAE vs. f
Vd=3V, Pout=29dBm, Iq=300mA
35
36
37
38
39
40
41
42
43
44
45
820
825
830
835
840
845
850
f [MHz]
PAE [%]
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
25
26
27
28
29
30
31
32
33
34
35
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
45
46
47
48
49
50
51
52
53
54
55
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc]
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=30dBm, Iq=300mA
35
36
37
38
39
40
41
42
43
44
45
820
825
830
835
840
845
850
f [MHz]
PAE [%]
Semiconductor Group
11
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
12
16.09.98
HL HF PE GaAs 1 / Fo
TDMA Mode: Padj vs. f
Vd=4V, Pout=31dBm, Iq=300mA
25
26
27
28
29
30
31
32
33
34
35
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc
]
TDMA Mode: Palt vs. f
Vd=4V, Pout=31dBm, Iq=300mA
45
46
47
48
49
50
51
52
53
54
55
820
825
830
835
840
845
850
f [MHz]
AC
PR
[d
Bc
]
TDMA Mode: Gain vs. f
Vd=4V, Pout=31dBm, Iq=300mA
20
21
22
23
24
25
26
27
28
29
30
820
825
830
835
840
845
850
f [MHz]
T
G
[d
B]
TDMA Mode: PAE vs. f
Vd=4V, Pout=31dBm, Iq=300mA
35
36
37
38
39
40
41
42
43
44
45
820
825
830
835
840
845
850
f [MHz]
PAE [%
]
Typical Performance in PCS CDMA Operation Mode:
CDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C
0
5
10
15
20
25
30
35
40
-10
-8
-6
-4
-2
0
2
4
6
8
Pin [dBm]
P
out
[dB
m
], P
A
E
[%
]
0
100
200
300
400
500
600
700
800
Id [m
A
]
Pout [dBm]
PAE [%]
Id [mA]
CDMA Mode: ACPR & TG vs. Pout
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C
0
10
20
30
40
50
60
70
80
14
16
18
20
22
24
26
28
30
Pout [dBm]
ACPR [
d
B
c
]
18
19
20
21
22
23
24
25
26
T
G
[d
B
]
ACP1,25 [dBc]
ACP1,98 [dBc]
TG [dB]
Semiconductor Group
12
1998-11-01
CGY 0819
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HL HF PE GaAs 1 / Fo
CDMA Mode : ACPR @1,25MHz Offset vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
40
41
42
43
44
45
46
47
48
49
50
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
CDMA Mode: ACPR @1,98MHz Offse t vs . f
Vd=3,0V, Pout=28dBm , Iq=250m A
50
51
52
53
54
55
56
57
58
59
60
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
CDMA Mode: Gain vs . f
Vd=3,0V, Pout=28dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
T
G
[d
B
]
CDMA Mode : PAE vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
30
32
34
36
38
40
42
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PA
E [
%
]
CDMA Mode: ACPR @1,25MHz Offs et vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
40
41
42
43
44
45
46
47
48
49
50
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
CDMA Mode: ACPR @1,98MHz Offset vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
50
51
52
53
54
55
56
57
58
59
60
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
Semiconductor Group
13
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
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HL HF PE GaAs 1 / Fo
CDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
TG
[
d
B
]
CDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
30
31
32
33
34
35
36
37
38
39
40
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PAE [
%
]
CDMA Mode: ACPR @1,25MHz Offset vs. f
Vd=4V, Pout=30dBm , Iq=250m A
40
41
42
43
44
45
46
47
48
49
50
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
CDMA Mode : ACPR @1,98MHz Offset vs. f
Vd=4V, Pout=30dBm , Iq=250m A
50
51
52
53
54
55
56
57
58
59
60
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
CDMA Mode: Gain vs. f
Vd=4V, Pout=30dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
T
G
[d
B
]
CDMA Mode: PAE vs. f
Vd=4V, Pout=30dBm , Iq=250m A
30
31
32
33
34
35
36
37
38
39
40
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PAE [
%
]
Semiconductor Group
14
1998-11-01
CGY 0819
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HL HF PE GaAs 1 / Fo
Typical Performance in PCS TDMA Operation Mode:
TDMA Mode: Pout, PAE & Id vs. Pin
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C
0
5
10
15
20
25
30
35
40
-10
-8
-6
-4
-2
0
2
4
6
8
Pin [dBm]
Po
u
t
[
d
Bm
]
,
PA
E [
%
]
0
100
200
300
400
500
600
700
800
Id [
m
A
]
Pout [dBm]
PAE [%]
Id [mA]
TDMA Mode : ACPR & TG vs. Pout
Vd=3,5V, Iq=250m A, f=1880 MHz, T=25C
0
10
20
30
40
50
60
70
14
16
18
20
22
24
26
28
30
Pout [dBm]
ACPR [
d
B
c
]
18
19
20
21
22
23
24
25
T
G
[d
B
]
Padj [dBc]
Palt [dBc]
TG [dB]
TDMA Mode: Padj vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
25
26
27
28
29
30
31
32
33
34
35
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
TDMA Mode: Palt vs. f
Vd=3,0V, Pout=28dBm , Iq=250m A
45
46
47
48
49
50
51
52
53
54
55
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
TDMA Mode: Gain vs. f
Vd=3V, Pout=28dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
TG
[
d
B
]
TDMA Mode: PAE vs. f
Vd=3V, Pout=28dBm , Iq=250m A
35
36
37
38
39
40
41
42
43
44
45
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PAE [
%
]
Semiconductor Group
15
1998-11-01
CGY 0819
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HL HF PE GaAs 1 / Fo
TDMA Mode: Padj vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
25
26
27
28
29
30
31
32
33
34
35
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
TDMA Mode: Palt vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
45
46
47
48
49
50
51
52
53
54
55
1850
1860
1870
1880
1890
1900
1910
f [MHz]
AC
PR
[
d
Bc
]
TDMA Mode: Gain vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
T
G
[d
B
]
TDMA Mode: PAE vs. f
Vd=3,5V, Pout=29dBm , Iq=250m A
35
36
37
38
39
40
41
42
43
44
45
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PAE [
%
]
TDMA Mode: Padj vs. f
Vd=4V, Pout=30dBm , Iq=250m A
25
26
27
28
29
30
31
32
33
34
35
1850
1860
1870
1880
1890
1900
1910
f [MHz]
A
C
PR
[
d
Bc
]
TDMA Mode: Palt vs. f
Vd=4V, Pout=30dBm , Iq=250m A
45
46
47
48
49
50
51
52
53
54
55
1850
1860
1870
1880
1890
1900
1910
f [MHz]
A
C
PR
[
d
Bc
]
Semiconductor Group
16
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
17
16.09.98
HL HF PE GaAs 1 / Fo
TDMA Mode: Gain vs. f
Vd=4V, Pout=30dBm , Iq=250m A
15
16
17
18
19
20
21
22
23
24
25
1850
1860
1870
1880
1890
1900
1910
f [MHz]
T
G
[d
B
]
TDMA Mode: PAE vs. f
Vd=4V, Pout=30dBm , Iq=250m A
33
34
35
36
37
38
39
40
41
42
43
1850
1860
1870
1880
1890
1900
1910
f [MHz]
PAE [
%
]
Semiconductor Group
17
1998-11-01
CGY 0819
Siemens Aktiengesellschaft
18
16.09.98
HL HF PE GaAs 1 / Fo
Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information,
Balanstrae 73, D-81541 Mnchen
copyright Siemens AG 1996. All Rights Reserved
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and circuits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives world-
wide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer
Semiconductor Group
18
1998-11-01
PDF 
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