Application
Applications in automotive electronics require intelligent power switches activated by
logic signals, which are shorted-load protected and provide error feedback.
This IC contains two of these power switches (low-side switches). In case of inductive
loads the integrated clamp diodes clamp the discharging voltage. If a "high" signal is
applied to the enable input both switches can be activated independently of one another
with TTL signals at the control inputs (active high). The high impedance inputs should
always be connected to a fixed potential (noise immunity).
The status output (open collector) signals the following malfunctions with high potential:
q
Overload,
q
Open load,
q
Shorted load to ground,
q
Overvoltage,
q
Overtemperature.
Type
Ordering Code
Package
TLE 4214 G
Q67000-A9094
P-DSO-20-7 (SMD)
Intelligent Double Low-Side Switch 2 x 0.5 A
Bipolar IC
TLE 4214 G
P-DSO-20-7
Features
q
Double low-side switch, 2 x 0.5 A
q
Power limitation
q
Overtemperature shutdown
q
Overvoltage shutdown
q
Status monitoring
q
Shorted-load protection
q
Integrated clamp diodes
q
Temperature range 40 to 125
C
Semiconductor Group
294
10.96
TLE 4214 G
Semiconductor Group
295
Pin Configuration
(top view)
TLE 4214 G
TLE 4214 G
Semiconductor Group
296
Pin Definitions and Functions
Pin No.
Symbol
Function
6, 16
GND
Ground Design wiring for the max.
short-circuit current (2 x 1 A)
10
IN2
Control input 2 (TTL compatible) activates the output
transistor 2 in case of high potential
2
V
S
Supply voltage In case of overvoltage at this pin large
sections of the circuit are deactivated. The status
output indicates this malfunction without delay time.
7
Q2
Output 2 Shorted load protected, open collector
output for currents up to 0.5 A, with clamping diodes to
supply voltage.
5
Q1
Output 1 Shorted load protected, open collector
output for currents up to 0.5 A, with clamping diodes to
supply voltage.
9
ENA
Enable input, active high
1
IN1
Control input 1 (TTL-compatible) activates output
transistor 1 in case of high potential
15
STA
Status output (open collector) for both outputs;
indicates overtemperature, overload, open load and
shorted load to ground as well as overvoltage at pin 3.
It is switched to high after a defined delay time in case
of malfunction (except: overvoltage)
3, 4, 8, 11 ... 14,
17 ... 20
N. C.
Not connected
TLE 4214 G
Semiconductor Group
297
Block Diagram
TLE 4214 G
Semiconductor Group
298
Circuit Description
Input Circuits
The control inputs and the enable input consist of TTL-compatible Schmitt triggers with
hysteresis. Controlled by these stages the buffer amplifiers drive the NPN power
transistors.
Switching Stages
The output stages consist of NPN power transistors with open collectors. Since the
protective circuit allocated to each stage limits the power dissipation, the outputs are
shorted-load protected to the supply voltage throughout the entire operating range.
Positive voltage peaks, which occur during the switching of inductive loads, are limited
by the integrated clamp diodes.
Monitoring and Protective Functions
During the activated status the outputs are monitored for open load, overload, and
shorted load to ground (see table below). In addition, large sections of the circuit are shut
down in case of excessive supply voltages
V
S
. Linked via OR gate the information
regarding these malfunctions effects the status output (open collector, active high). An
internally determined delay time applied to all malfunctions but overvoltage prevents the
output of messages in case of short-term malfunctions. Furthermore, a temperature
protection circuit prevents thermal overload. If overload occurs, the outputs are
protected according to the safe operating area (SOA) mode (see diagram). If voltage
and current are outside the SOA, the outputs oscillate to reduce the power dissipation.
The switching frequency depends on the internal delay time and the external load
(inductances and capacitances). If the frequency is low, the status output may follow the
oscillation. An integrated reverse diode protects the supply voltage
V
S
against reverse
polarities. Similarly the load circuit is protected against reverse polarities within the limits
established by the maximum ratings (no shorted load at the same time!). At supply
voltages below the operating range an undervoltage detector ensures that neither the
status nor the outputs are activated. At supply voltages below the operating range the
output stages are de-activated.
TLE 4214 G
Semiconductor Group
299
Status Output (H = Error)
Undervoltage
> 3.5 V
Operating Range
Overvoltage
V
I
= L
(passive)
V
I
= H
(active)
Normal function
L
L
L
H
Overload
L
L
H
H
Open load
L
L
H
H
Shorted output to ground
L
H
H
H
Overtemperature
L
H
H
H
TLE 4214 G
Semiconductor Group
300
Circuit Diagram
TLE 4214 G
Semiconductor Group
301
Absolute Maximum Ratings
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
min.
max.
Voltages
Supply voltage,
t
<
0.2 s
Supply voltage
Input voltage
Output voltage (status output)
Output voltage (switching stages)
V
S
V
S
V
I
V
O
V
Q
1.3
13
0.3
0.3
70
40
40
40
+
V
S
V
V
V
V
V
Currents
Output current (switching stages)
Current with reverse polarity,
t
< 0.1 s
Output current positive clamp
Ground current
Output current (status output)
I
Q
I
Q
I
Q
I
GND
I
O
internally
limited
0.7
1.4
0.7
2.0
10
A
A
A
mA
Junction temperature
Storage temperature
T
j
T
stg
50
150
150
C
C
Operating Range
Supply voltage
V
S
6
1)
25
V
Supply voltage slew rate
d
V
S
/
d
t
1
1
V/
s
Output current (switching stages)
Input voltage
Output current (status output)
I
Q
V
I
,
V
F
I
O
0.5
5
0
0.5
32
5
A
V
mA
Ambient temperature
T
A
40
125
C
1)
Lower limit = 5 V, if previously
V
S
greater than 6 V (turn-on hysteresis)
TLE 4214 G
Semiconductor Group
302
Supply voltage while shorted load
V
S
15
V
Thermal resistance junction to ambient
R
th JA
77
K/W
Characteristics
V
S
= 6 to 16 V (typ.
V
S
= 12 V);
T
j
= 40 to 150
C (typ.
T
j
= 25
C)
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ.
max.
General Characteristics
Quiescent current
Supply voltage
I
S
I
S
2
35
4
50
mA
mA
V
F
<
V
FL
V
I
=
V
I
>
V
IH
,
V
F
>
V
FH
Supply overvoltage
shutdown threshold
V
SO
30
37
42
V
V
L
=
5 V;
V
O
> 4.5 V
Hysteresis of supply
overvoltage shutdown
threshold
V
SO
4
6
9
V
V
L
=
5 V;
V
O
> 4.5 V
Open load error
threshold voltage
V
Q
5
20
50
mV
V
L
=
5 V;
V
O
> 4.5 V
Open load error
threshold current
I
QU
1
40
mA
V
Q
=
V
QU
Open load error
threshold current
for both channels active
I
QU
80
mA
V
Q1
=
V
Q2
=
V
QU
Absolute Maximum Ratings (cont'd)
T
j
= 40 to 150
C
Parameter
Symbol
Limit Values
Unit
min.
max.
TLE 4214 G
Semiconductor Group
303
Logic
Control inputs
H-input voltage threshold
L-input voltage threshold
V
IH
V
IL
1.3
0.9
1.8
1.2
2.1
1.5
V
V
Hysteresis of control
input voltage
V
I
0.2
0.6
1.0
V
Enable input
H-input voltage threshold
L-input voltage threshold
V
FH
V
FL
1.6
1.4
2.1
1.8
2.7
2.3
V
V
Hysteresis of enable
input voltage
V
F
0.1
0.3
0.7
V
H-input current
L-input current
I
IH
I
IL
0
0
10
10
A
A
V
I
= 5 V
V
I
= 0.5 V
Status Output (open collector)
L-saturation voltage
V
osat
0.1
0.2
0.4
V
I
O
=
5 mA
Status delay time
t
dS
8
20
32
s
1)
1)
Period from the beginning of the disturbance at one channel (exception: overvoltage) until the 50 % value of
the status switching edge is reached.
Characteristics (cont'd)
V
S
= 6 to 16 V (typ.
V
S
= 12 V);
T
j
= 40 to 150
C (typ.
T
j
= 25
C)
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ.
max.
TLE 4214 G
Semiconductor Group
304
Switching Stages
Saturation voltage
Saturation voltage
V
QSat
V
QSat
0.6
45
0.8
100
V
mV
I
Q
=
0.5 A;
V
I
>
V
IH
;
V
F
>
V
FH
I
Q
=
50 mA;
V
I
>
V
IH
;
V
F
>
V
FH
Output current
Leakage current
I
Q
I
Q
0.5
5
50
A
A
V
QSat
= 0.8 V;
V
I
>
V
IH
V
Q
= 6 V;
V
I
<
V
IL
Switch-ON time
Switch-OFF time
t
D ON
t
D OFF
0.2
0.2
0.5
2
5
5
s
s
I
Q
=
0.5 A
see Timing
I
Q
=
0.5 A
Diagram
Forward voltage of
substrate diode
Forward voltage of
clamp diode
V
QS
V
QF
1.3
1.3
1.7
1.7
V
V
I
Q
=
0.5 A
t
< 0.1 s
I
Q
=
0.5 A
t
< 0.1 s
Leakage current of
clamp diode
I
QF
5
A
V
Q
= 0 V;
V
I
<
V
IL
Characteristics (cont'd)
V
S
= 6 to 16 V (typ.
V
S
= 12 V);
T
j
= 40 to 150
C (typ.
T
j
= 25
C)
Parameter
Symbol
Limit Values
Unit Test Condition
min. typ.
max.
TLE 4214 G
Semiconductor Group
305
Test Circuit
Timing Diagram
TLE 4214 G
Semiconductor Group
306
Application Circuit
Semiconductor Group
307
TLE 4214 G
Quiescent Current
I
S
versus Ambient
Temperature
T
A
in the OFF-Status
V
S
= 12 V;
V
F
<
V
FL
Output Voltage
V
Q
versus
Output Current
V
S
= 12 V;
V
I
>
V
IH
Shorted Load Current
I
Q0
versus Output Voltage
V
Q
Semiconductor Group
308
TLE 4214 G
Equal current at both channels
Only one channel in operation
First channel 50 mA, second
channel
I
Q
TLE 4214 G
Semiconductor Group
309
Package Outlines
P-DSO-20-7
(Plastic Dual Small Outline Package)
GPSO5094
Sorts of Packing
Package outlines for tubes, trays etc. are contained in our
Data Book "Package Information".
Dimensions in mm
SMD = Surface Mounted Device
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