Rev.1.0
_20
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Seiko Instruments Inc.
1
The S-8603AWI is a suitable linear image sensor for a
multichip-type contact image sensor with a resolution of 8
dots per mm. This IC integrates a 64 dots photo-transistor
array and a CMOS scanning circuit. Picture signals are
output one after another in analog signals, synchronized with
a clock signal.
Features
Adjustable scanning length for various sizes of paper : 8 mm.
Various sizes of paper can be read by simply changing the number of chips aligned in a line.
2-input signals : SI, CLK.
Only these two input signals, start and clock, make the scanning easily.
High sensitivity : High sensitive photo transistor.
Low current consumption : 5 V single power supply and CMOS scanning circuit.
Terminal functions
Table-1
Terminal No.
Symbol
Name
Operation
1
SI
Start input pin
Shift register data input pin
CMOS input (Logic level is TTL- level)
2
CLK
Clock input pin
Shift register clock input pin
CMOS input (Logic level is TTL- level)
3
VDD
Power supply pin
Normally +5 V
4
GND
Ground pin
Normally 0 V
5
SIG
Video signal output pin
Picture image analog signal output pin
6
N.C.
7
SO
Start output pin
Shift register data output pin
Circuit diagram
Q
D Q
CK CK
CK CK
Q
D Q
CK CK
Q
D Q
CK CK
Q
D Q
CK CK
Q
M
D Q
CK CK
3
64
63
2
1
Q
D Q
CK CK
D
M
T T
R
Q
SO
Q64
VDD
GND
SI
64
63
3
2
1
0
D.G.
A.G.
SI
CLK
SIG
SI
Q64
SI
RGE
RGO
SCS
SCE
SCO
RGS
Figure-1
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Rev.1.0
_20
Seiko Instruments Inc.
2
Timing chart
CLK
th
tsu
SI
R
SCO
(SI for 2nd IC)
(dash line : 2nd IC)
SI(SO)
Q0
Q1
Q2
Q63
Q64
SO
63
62
61
60
6
5
4
3
2
1
SIG
SCS
(RGS)
(RGE)
1
64
62
63
61
60
6
5
4
3
Tw
2
SCE
(RGO)
tphl
tplh
Figure-2
64
Absolute maximum ratings
Table-2
Parameter
Symbol
Condition
Rating
Unit
Power supply voltage
V
DD
VDD-GND
-0.4
+7.0
V
Input voltage
V
IN
SI, CLK
-0.4
V
DD
+0.4
V
Output voltage
V
OUT
SO, SIG
-0.4
V
DD
+0.4
V
Operating temperature
T
opr
-5
+85
C
Storage temperature
T
stg
-40
+125
C
Caution The absolute maximum ratings are rated values exceeding which the product could
suffer physical damage. These values must therefore not be exceeded under any
conditions.
Electric characteristics
1) DC characteristics
Table-3
V
DD
=5V
10%, T
OPR
=55
C
Parameter
Symbol
Condition
Rating
Unit
min.
typ.
max.
Input voltage
VIH
SI, CLK
2.4
V
VIL
0.8
Input current
IIH
SI, CLK
0.5
A
IIL
-0.5
Output voltage
VOH
IOH = -100
A
3.8
V
VOL
IOL = 100
A
0.4
Current consumption
IDD
fck = 1 MHz
0.2
3.0
mA
Leak current
IS
VDD-GND
0.2
A
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
Rev.1.0
_20
S-8603 AWI
Seiko Instruments Inc.
3
2) Switching characteristics
Table-4
V
DD
=5V
10%, T
OPR
=55
C
Parameter
Symbol
Condition
Rating
Unit
A
B
min.
typ.
max.
*1)
*2)
Clock pulse width
Tw
High period of CLK
100
(1/fck)
-100
ns
Data set up time
tsu
100
1/fck
ns
Data hold time
th
0
(1/fck)
-200
ns
Clock frequency
fck
Assurance of shift-
register operation
2.5
MHz
CLK-SO L-H
delay time
tplh
fck = 2.5 MHz
C
L
= 10 pF
150
ns
CLK-SO H-L
delay time
tphl
fck = 2.5 MHz
C
L
= 10 pF
150
ns
Output stable time1
*3)
tpd1
900
ns
Output stable time 2
*3)
tpd2
300
ns
*1) All products are tested.
*2) Extracted products are examined.
*3) At measuring light level of photoelectric conversion characteristics.
(Note)
SIG
CLK
50%
90%
100%
10%
tpd2
Figure-3
tpd1
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Rev.1.0
_20
Seiko Instruments Inc.
4
3) Photoelectric conversion characteristics
Condition :
V
DD
=5 V, T
OPR
=55
C, fck=500 kHz(duty=50 %)
Read period RT=5 ms, load capacitor C
L
=100 pF
Light source LED
(
=570 nm, half width
30 nm, illuminance 12 lx)
Connecting a capacitor of 0.1
F between VDD and GND.
Vp is measured using the measurement circuit of Figure-4.
+
+5V
Vp
-5V
(AD843)
SIG
CLK
100 pF
74HC4066
Figure-4 Measurement circuit
-
Av=2
1k
1k
Table-5
Parameter
Symbol
Condition
Rating
Unit
Note
A
B
min.
typ.
max.
*1)
*2)
Light level
Vpave
Exposure value
Ep = 0.06 lx s
0.570
1.268
V
3)-2
dV1
Read period
-6.0
+6.0
%
3)-1
Light level
dV2
RT = 5 ms
-6.0
+6.0
%
deviation
dV3
0.0
+7.5
%
dV4
, i = 2
62
-7.0
+7.0
%
, i = 1 , 64
-15.0
+15.0
%
dV1
+dV2
RT = 5 ms
-10.0
+10.0
%
Dark level 1
Vd1
RT = 5 ms
fck = 500 kHz
24
60
mV
Dark level 2
Vd2
RT = 32 ms
fck = 2 kHz
240
mV
Dark level
deviation
inside the
wafer *4)
dark
RT = 5 ms
fck = 500 kHz
0
9
mV
Linearity
0.95
1.1
1.2
3)-3
Image lag
RIL
measuring Vpave
40
%
3)-1
Light response
RIR
measuring Vpave
35
%
3)-1
*1) All products are tested.
*2) Extracted products are examined.
*4) The deviation of the average value of Vd1(1
64 bit) inside a wafer.
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
Rev.1.0
_20
S-8603 AWI
Seiko Instruments Inc.
5
3)-1 Parameter definition
Vp_ ave
: average of all bit output
Vp_ max
: maximum output
Vave1: average of 2
10bit
Vp_ min
: Fminimum output
Vave2
: average of 28
36bit
Vp(i)
: i bit output ( i =1
to
63)
Vave3
: average of 55
63bit
V1 = Vave2 - Vave1
V2 = Vave3 - Vave2
dV1
V1
Vp_ ave
=
100
(%)
dV2
V2
Vp_ ave
=
100
dV3
Vp_ max Vp_ min
Vp_ max Vp_ min
=
-
+
100
dV4
Vp(i) Vp(i 1)
Vp_ ave
100
=
-
+
dV1 dV2
Vave3 Vave1
Vp_ ave
100
+
=
-
RIL
: Image lag (cf. Figure-5)
RIR
: Light response (cf. Figure-5)
100%
Vp
Image lag : RIL
40%
Figure-5
Light response : RIR
35%
Vp
OFF
ON
OFF
Vd
8
7
6
2
1
LED
SIG
SI
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Rev.1.0
_20
Seiko Instruments Inc.
6
3)-2 Light level ranking
Table-6
Vpave(typ)
2.5 %
RANK
Vpave(V)
RANK
Vpave(V)
min.(
)
typ.
max.(<)
min.(
)
typ.
max.(<)
0
0.570
0.584
0.599
8
0.850
0.872
0.893
1
0.599
0.614
0.630
9
0.893
0.916
0.939
2
0.630
0.646
0.662
A
0.939
0.963
0.987
3
0.662
0.679
0.696
B
0.987
1.013
1.038
4
0.696
0.714
0.731
C
1.038
1.065
1.091
5
0.731
0.750
0.769
D
1.091
1.119
1.147
6
0.769
0.789
0.808
E
1.147
1.177
1.206
7
0.808
0.829
0.850
F
1.206
1.237
1.268
3)-3 Linearity
value is achieved using the non-linear regression based on the following equation,
measuring Vp every 0.01 Lx s from dark status to 0.06 Lx s.
Vp_ ave A B Ep
= +
(A,B: constant , Ep: exposure value)
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
Rev.1.0
_20
S-8603 AWI
Seiko Instruments Inc.
7
Pad configuration
Photo detecting windous
Figure-6
AR
7
6
5
4
AC
3
2
1
AL
Chip size : 8000
m350m (before scribing)
Pad size : 100
m80m (Opening area)
(0,0) : The coordinate origin is the center of left bottom scribing area
The minimum distance between boundary of pad opening area and Al pattern
15m
Table-7
Unit :
m
PAD No.
Name
Coordinate
PAD No.
Name
Coordinate
X
Y
X
Y
1
SI
1431
102
5
SIG
4870
102
2
CK
1832
102
6
N.C.
6223
102
3
VDD
3182
102
7
SO
7021
102
4
GND
4245
102
Table-8 Unit:
m
Alignment mark
Coordinate
name
X
Y
AL
240
102
AC
4000
102
AR
7790
102
Chip size and sensor arrangement diagram
Shaded area : photo detecting window (X=85,Y=60)
P
31
64
63
62
61
(Scribe center)
X
Y
145.5
32
34
33
31
80
4
3
2
1
P
P
(P=124.12)
Unit :
m
P
P
P
P
79.5
P
31
8000
Chip size : 8000
m 350 m (before scribing)
79.5
Figure-7
Note : The coordinate origin is the center of
the scribe line of the lower left corner
of the IC, and the coordinate values
point the center of the pads and the
alignment marks .
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Rev.1.0
_20
Seiko Instruments Inc.
8
Wafer form
Note: The arrangement of IC is subject to change without notes.
Wafer thickness: 350
30
m
Wafer diameter
:
6 inches
O
r
ient
a
t
io
n F
l
at
Wa
f
e
r N
o
.
Lot
N
o
.
(Pad side)
IC chip
(Sensor side)
Figure-8
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
Rev.1.0
_20
S-8603 AWI
Seiko Instruments Inc.
9
Scribe line
60
(Scribe line area)
60
50
51
290
54
(Unit :
m)
(Photo detecting window)
(Passivasion boundary)
60
7940
Figure-9
Alignment mark
(Unit :
m)
The minimum distance between boundary of pad opening
area and Al pattern area has to be 15
m or more.
Figure-10
Al pattern
Passivasion
opening
35
35
30
4
25
27.5
27.5
4
LINEAR IMAGE SENCER IC FOR CONTACT IMAGE SENSOR
S-8603 AWI
Rev.1.0
_20
Seiko Instruments Inc.
10
Handling precautions
Products are shipped in wafer or bare chip form. Keep these precautions when handling a product.
1. Protect against static electricity damage when mounting on a sawing or dicing machine.
Wear charge-proof clothing and discharge all static electricity from body.
Work on a grounded conductive mat.
Ground all soldering irons and machines.
Maintain room humidity from 50 to 60 %RH.
2. Prevent malfunctions due to corrosion of electrode pads.
Do not store products in a high-temperature, humid and dusty environment or one that includes
corrosive gas.
Coat surface of IC with silicon resin to keep surface clean.
Use clear and non-static packing material.
Store products in a dry box filled with dry N2 gas having the dew point 30C or less when storing
products for 3 months or more.
3. Protect the internal Al lines and protective film of the IC when mounting products.
Do not damage the surface of the IC when mounting a die or bonding wires.
Do not touch the surface of the IC with tweezers.
4. Maintain the stability of the IC.
Always supply VDD to the IC since the substrate is n-type semiconductor.
Send the null data until the Vsig signal becomes stable at power on.
Coat the IC with a transparent resin like silicon resin or enclose the IC with glass.
Decrease the parasitic resistance of GND line and VDD line of the circuit board on which the IC is
mounted.
Decrease the parasitic capacitance between CLK and SIG of the circuit board on which the IC is
mounted.
Fix the cycle and duty of the input signal while operating.
Mount a capacitor between VDD and GND to prevent influence of voltage fluctuation due to the
response current of the IC. Decide the mounting method and the capacitance of the capacitor based on
evaluation of the product in an actual application.
The information described herein is subject to change without notice.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, or any apparatus
installed in airplanes and other vehicles, without prior written permission of Seiko Instruments Inc.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
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