1
SP207EDS/09
SP207E Series High Performance Transceivers
Copyright 2000 Sipex Corporation
SP207ESP213E
+5V High Performance RS232 Transceivers
s
Single +5V Supply Operation
s
0.1
F External Charge Pump Capacitors
s
Typical 230kbps Transmission Rates
s
Standard SOIC and SSOP Packages
s
Lower Supply Current Than Competition
(typical 3mA)
s
1
A Shutdown Mode
s
WakeUp Feature in Shutdown Mode
s
TriState Receiver Outputs
s
Meets All EIA-232 and ITU V.28
Specifications
s
Improved ESD Specifications:
+15kV Human Body Model
+15kV IEC1000-4-2 Air Discharge
+8kV IEC1000-4-2 Contact Discharge
Number of RS232
No. of Receivers
No. of External
Model
Drivers
Receivers
Active in Shutdown 0.1
F Capacitors
Shutdown WakeUp TTL TriState
SP207E
5
3
0
4
No
No
No
SP208E
4
4
0
4
No
No
No
SP211E
4
5
0
4
Yes
No
Yes
SP213E
4
5
2
4
Yes
Yes
Yes
Table 1. Model Selection Table
DESCRIPTION
The SP200E Series are enhanced multichannel RS-232 line transceivers with improved
electrical performance. The SP200E family is pin-to-pin compatible with our previous SP200
family as well as popular industry standards. As with the orignal SP200 family, all models in this
Series feature lowpower CMOS construction and Sipexpatented (5,306,954) on-board
charge pump circuitry to generate the
10V RS-232 voltage levels, using 0.1
F charge pump
capacitors to save board space and reduce circuit cost. The SP211E and SP213E models feature
a lowpower shutdown mode, which reduces power supply drain to 1
A. Enhancements include
lower power supply current at 3mA typical (no load) and superior ESD performance. The ESD
tolerance has been improved on this family to over
15kV for both Human Body Model and
IEC1000-4-2 Air Discharge test methods.
SP207EDS/09
SP207E Series High Performance RS232 Transceivers
Copyright 2000 Sipex Corporation
2
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional
operation of the device at these or any other
above those indicated in the operation sections
of the specifications below is not implied. Exposure
to absolute maximum rating conditions for extended
periods of time may affect reliability.
V
CC
.................................................................. +6V
V
+
....................................... (V
CC
0.3V) to +13.2V
V
................................................................ 13.2V
Input Voltages
T
IN
.......................................... 0.3V to (V
CC
+0.3V)
R
IN
................................................................
20V
Output Voltages
T
OUT
................................ (V
+
, +0.3V) to (V
, 0.3V)
R
OUT
....................................... 0.3V to (V
CC
+0.3V)
Short Circuit Duration on T
OUT
.............. Continuous
.
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
TTL INPUTS
T
IN
, EN, SD
Logic Threshold
V
IL
0.8
Volts
V
IH
2.0
Volts
Logic Pullup Current
15
200
A
T
IN
= 0V
Maximum Transmssion Rate
120
230
kbps
C
L
= 1000pF, R
L
= 3K
TTL OUTPUTS
Compatibility
TTL/CMOS
V
OL
0.4
Volts
I
OUT
= 3.2mA; V
CC
= +5V
V
OH
3.5
Volts
I
OUT
= 1.0mA
Leakage Current
0.05
+10
A
0V
R
OUT
V
CC
; SP211 EN = 0V;
SP213 EN = V
CC
T
A
= +25
C
RS232 OUTPUT
Output Voltage Swing
+5
+7
Volts
All transmitter outputs loaded
with 3K
to ground
Output Resistance
300
V
CC
= 0V; V
OUT
= +2V
Output Short Circuit Current
+25
mA
Infinite duration, V
OUT
= 0V
RS232 INPUT
Voltage Range
15
+15
Volts
Voltage Threshold
Low
0.8
1.2
Volts
V
CC
= 5V, T
A
= +25
C
High
1.7
2.8
Volts
V
CC
= 5V, T
A
= +25
C
Hysteresis
0.2
0.5
1.0
Volts
V
CC
= +5V
Resistance
3
5
7
k
V
IN
=+15V; T
A
= +25
C
DYNAMIC CHARACTERISTICS
Driver Propagation Delay
1.5
s
TTLtoRS-232
Receiver Propagation Delay
0.5
1.5
s
RS-232toTTL
Instantaneous Slew Rate
30
V/
s
C
L
= 50pF, R
L
= 37K
;
T
A
= +25
C; from +3V
Transition Time
1.5
s
C
L
= 2,500pF, R
L
= 3K
;
measured from +3V to 3V
or 3V to +3V
Output Enable Time
400
ns
Output Disable Time
250
ns
SPECIFICATIONS
V
CC
at nominal ratings; 0.1
F charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
Power Dissipation Per Package
24-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
24-pin PDIP (derate 15.9mW/
o
C above +70
o
C)....1300mW
24-pin SOIC (derate 12.5mW/
o
C above +70
o
C)...1000mW
28-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
28-pin SOIC (derate 12.7mW/
o
C above +70
o
C)...1000mW
3
SP207EDS/09
SP207E Series High Performance Transceivers
Copyright 2000 Sipex Corporation
Transmitter Output @ 120kbps
R
L
=3K
, CL=2,500pF
Transmitter Output @ 120kbps
R
L
=3K
, C
L
=1,000pF
Transmitter Output @ 240kbps
R
L
=3K
, C
L
=1,000pF
Transmitter Output @ 240kbps
R
L
=3K
, C
L
=2,500pF
SPECIFICATIONS
V
CC
at nominal ratings; 0.1
F charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
POWER REQUIREMENTS
V
CC
SP207
4.75
5.00
5.25
Volts
All other parts
4.50
5.00
5.50
Volts
I
CC
T
A
= +25
C
3
6
mA
No load; V
CC
=
10%
15
mA
All transmitters R
L
= 3K
Shutdown Current
1
10
A
T
A
= +25
C
ENVIRONMENTAL AND MECHANICAL
Operating Temperature
Commercial, C
0
+70
C
Extended, E
40
+85
C
Storage Temperature
65
+125
C
Package
A
Shrink (SSOP) small outline
T
Wide (SOIC) small outline
P
Narrow (PDIP) Plastic Dual-In-Line
SP207EDS/09
SP207E Series High Performance RS232 Transceivers
Copyright 2000 Sipex Corporation
4
PINOUT
SP213E
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V
C
2
C
2
+
SP211E
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V
C
2
C
2
+
SP208E
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
2
OUT
T
1
OUT
R
2
IN
R
2
OUT
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
3
OUT
R
3
IN
R
3
OUT
T
4
IN
T
4
OUT
T
3
IN
T
2
IN
R
4
OUT
R
4
IN
V
C
2
C
2
+
SP207E
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
3
OUT
T
1
OUT
T
2
OUT
R
1
IN
R
1
OUT
T
2
IN
T
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
2
IN
R
2
OUT
T
5
IN
T
5
OUT
T
4
IN
T
3
IN
R
3
OUT
R
3
IN
V
C
2
C
2
+
5
SP207EDS/09
SP207E Series High Performance Transceivers
Copyright 2000 Sipex Corporation
FEATURES
As in the original RS-232 multi-channel
products, the SP207E Series multichannel
RS-232 line transceivers provide a variety of
configurations to fit most communication
needs, especially those applications where +12V
is not available. All models in this Series feature
lowpower CMOS construction and SIPEX
proprietary on-board charge pump circuitry to
generate the +10V RS-232 voltage levels. The
ability to use 0.1
F charge pump capacitors
saves board space and reduces circuit cost.
Different models within the Series provide
different driver/receiver combinations to
match any application requirement.
The SP211 and SP213E models feature a low
power shutdown mode, which reduces power
supply drain to 1
A. The SP213E includes a
Wake-Up function which keeps two receivers
active in the shutdown mode, unless disabled by
the EN pin.
The family is available in 28pin SO (wide) and
SSOP (shrink) small outline packages. Devices
can be specified for commercial (0
C to +70
C)
and industrial/extended (40
C to +85
C)
operating temperatures.
THEORY OF OPERATION
The SP207E Series devices are made up of
three basic circuit blocks -- 1) transmitter/
driver, 2) receiver and 3) the SIPEX
proprietary charge pump. Each model within
the Series incorporates variations of these
circuits to achieve the desired configuration
and performance.
ChargePump
The charge pump is a Sipexpatented design
(5,306,954) and uses a unique approach
compared to older lessefficient designs. The
charge pump still requires four external capacitors,
but uses a fourphase voltage shifting technique
to attain symmetrical 10V power supplies.
Figure 3a shows the waveform found on the
positive side of capcitor C
2
, and Figure 3b
shows the negative side of capcitor C
2
. There is
a freerunning oscillator that controls the four
phases of the voltage shifting. A description of
each phase follows.
Phase 1
-- V
SS
charge storage --During this phase of the
clock cycle, the positive side of capacitors C
1
and C
2
are initially charged to +5V. C
l
+
is then
switched to ground and the charge in C
1
is
transferred to C
2
. Since C
2
+
is connected to
+5V, the voltage potential across capacitor C
2
is
now 10V.
Phase 2
-- V
SS
transfer -- Phase two of the clock
connects the negative terminal of C
2
to the V
SS
storage capacitor and the positive terminal of C
2
to ground, and transfers the generated l0V to
C
3
. Simultaneously, the positive side of
capacitor C
1
is switched to +5V and the negative
side is connected to ground.
Phase 3
-- V
DD
charge storage -- The third phase of the
clock is identical to the first phase -- the charge
transferred in C
1
produces 5V in the negative
terminal of C
1
, which is applied to the negative
side of capacitor C
2
. Since C
2
+
is at +5V, the
voltage potential across C
2
is l0V.
V
CC
= +5V
5V
5V
+5V
V
SS
Storage Capacitor
V
DD
Storage Capacitor
C
1
C
2
C
3
C
4
+
+
+
+
Figure 1. Charge Pump -- Phase 1
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