1
SP207EHDS/08
SP207EH Series High Performance Transceivers
Copyright 2000 Sipex Corporation
SP207EHSP213EH
s
Single +5V Supply Operation
s
0.1
F External Charge Pump Capacitors
s
500Kbps Data Rate Under Load
s
Standard SOIC and SSOP Packages
s
Lower Supply Current Than Competition
(typical 3mA)
s
1
A Shutdown Mode
s
WakeUp Feature in Shutdown Mode
s
TriState Receiver Outputs
s
Ideal for High Speed RS-232 Applications
s
Improved ESD Specifications:
+15kV Human Body Model
+15kV IEC1000-4-2 Air Discharge
+8kV IEC1000-4-2 Contact Discharge
Nu RS232
No. of Receivers
No. of External
Model
Drivers
Receivers
Active in Shutdown 0.1
F Capacitors
Shutdown WakeUp TTL TriState
SP207EH
5
3
0
4
No
No
No
SP208EH
4
4
0
4
No
No
No
SP211EH
4
5
0
4
Yes
No
Yes
SP213EH
4
5
2
4
Yes
Yes
Yes
Table 1. Model Selection Table
DESCRIPTION
The SP207EH/208EH/211EH/213EH devices are high speed enhanced multi-channel
RS-232 line transceivers with improved electrical performance. The SP207EH/208EH/
211EH/213EH series is a superior drop-in replacement to our previous versions as well as
popular industry standards. All devices feature low-power CMOS construction and the
Sipex-patented (5,306,954) on-board charge pump circuitry that generates the +10V
RS-232 voltage levels using 0.1
F charge pump capacitors. The SP211E and SP213E
devices feature a low-power shutdown mode, which reduces power supply drain to 1
A.
Enhancements to this series include a higher transmission rate of 500Kbps, a lower
power supply current at 3mA typical (no load), and superior ESD performance. The ESD
tolerance has been improved for this series to over +15kV for both Human Body Model and
IEC1000-4-2 Air Discharge test methods.
High Speed +5V High Performance
RS232 Transceivers
SP207EHDS/08
SP207EH Series High Performance RS232 Transceivers
Copyright 2000 Sipex Corporation
2
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation of the device at
these or any other above those indicated in the operation sections of
the specifications below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may affect reliability.
V
CC
............................................................................................ +6V
V
+
................................................................. (V
CC
0.3V) to +13.2V
V
........................................................................................... 13.2V
Input Voltages
T
IN
................................................................... 0.3V to (V
CC
+0.3V)
R
IN
...........................................................................................
20V
Output Voltages
T
OUT
.......................................................... (V
+
, +0.3V) to (V
, 0.3V)
R
OUT
................................................................. 0.3V to (V
CC
+0.3V)
Short Circuit Duration on T
OUT
....................................... Continuous
Power Dissipation
Plastic DIP .......................................................................... 375mW
(derate 7mW/
C above +70
C)
Small Outline ...................................................................... 375mW
(derate 7mW/
C above +70
C)
SPECIFICATIONS
V
CC
at nominal ratings; 0.1
F charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
TTL INPUTS
T
IN
, EN, SD
Logic Threshold
V
IL
0.8
Volts
V
IH
2.0
Volts
Logic Pullup Current
15
200
A
T
IN
= 0V
Maximum Transmission Rate
480
Kbps
C
L
= 1000pF, R
L
= 3K
TTL OUTPUTS
Compatibility
TTL/CMOS
V
OL
0.4
Volts
I
OUT
= 3.2mA; V
CC
= +5V
V
OH
3.5
Volts
I
OUT
= 1.0mA
Leakage Current
0.05
+10
A
0V
R
OUT
V
CC
; SP211 EN = 0V;
SP213 EN = V
CC
T
A
= +25
C
RS232 OUTPUT
Output Voltage Swing
+5
+7
Volts
All transmitter outputs loaded
with 3K
to ground
Output Resistance
300
V
CC
= 0V; V
OUT
= +2V
Output Short Circuit Current
+25
mA
Infinite duration, V
OUT
= 0V
RS232 INPUT
Voltage Range
15
+15
Volts
Voltage Threshold
Low
0.8
1.2
Volts
V
CC
= 5V, T
A
= +25
C
High
1.7
2.8
Volts
V
CC
= 5V, T
A
= +25
C
Hysteresis
0.2
0.5
1.0
Volts
V
CC
= +5V
Resistance
3
5
7
k
V
IN
=+15V; T
A
= +25
C
DYNAMIC CHARACTERISTICS
Driver Propagation Delay
250
ns
TTLtoRS-232
Receiver Propagation Delay
200
500
ns
RS-232toTTL
Instantaneous Slew Rate
TBD
V/
s
C
L
= 50pF, R
L
= 37K
;
T
A
= +25
C; from +3V
Transition Time
TBD
s
C
L
= 2,500pF, R
L
= 3K
;
measured from +3V to 3V
or 3V to +3V
Output Enable Time
400
ns
Output Disable Time
250
ns
Power Dissipation Per Package
24-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
24-pin PDIP (derate 15.9mW/
o
C above +70
o
C)....1300mW
24-pin SOIC (derate 12.5mW/
o
C above +70
o
C)...1000mW
28-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
28-pin SOIC (derate 12.7mW/
o
C above +70
o
C)...1000mW
3
SP207EHDS/08
SP207EH Series High Performance Transceivers
Copyright 2000 Sipex Corporation
SPECIFICATIONS
V
CC
at nominal ratings; 0.1
F charge pump capacitors; T
MIN
to T
MAX
, unless otherwise noted.
PARAMETER
MIN.
TYP.
MAX.
UNIT
CONDITIONS
POWER REQUIREMENTS
V
CC
SP207EH
4.75
5.00
5.25
Volts
All other parts
4.50
5.00
5.50
Volts
I
CC
T
A
= +25
C
3
6
mA
No load; V
CC
=
10%
15
mA
All transmitters R
L
= 3K
Shutdown Current
1
10
A
T
A
= +25
C
ENVIRONMENTAL AND MECHANICAL
Operating Temperature
Commercial, C
0
+70
C
Extended, E
40
+85
C
Storage Temperature
65
+125
C
Package
A
Shrink (SSOP) small outline
T
Wide (SOIC) small outline
P
Narrow (PDIP) Plastic Dual-In-Line
Transmitter Output @ 240Kbps R
L
= 3K
, C
L
= 1,000pF
Transmitter Output @ 500Kbps R
L
= 3K
, C
L
= 1,000pF
SP207EHDS/08
SP207EH Series High Performance RS232 Transceivers
Copyright 2000 Sipex Corporation
4
PINOUT
SP213EH
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V
C
2
C
2
+
SP211EH
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
T
3
OUT
T
1
OUT
T
2
OUT
R
2
IN
R
2
OUT
T
2
IN
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
3
IN
R
3
OUT
SHUTDOWN (SD)
EN
R
4
IN
R
4
OUT
T
4
IN
T
3
IN
R
5
OUT
R
5
IN
V
C
2
C
2
+
SP208EH
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
2
OUT
T
1
OUT
R
2
IN
R
2
OUT
T
1
IN
R
1
OUT
R
1
IN
GND
V
CC
C
1
+
V+
C
1
T
3
OUT
R
3
IN
R
3
OUT
T
4
IN
T
4
OUT
T
3
IN
T
2
IN
R
4
OUT
R
4
IN
V
C
2
C
2
+
SP207EH
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
T
3
OUT
T
1
OUT
T
2
OUT
R
1
IN
R
1
OUT
T
2
IN
T
1
IN
GND
V
CC
C
1
+
V+
C
1
T
4
OUT
R
2
IN
R
2
OUT
T
5
IN
T
5
OUT
T
4
IN
T
3
IN
R
3
OUT
R
3
IN
V
C
2
C
2
+
5
SP207EHDS/08
SP207EH Series High Performance Transceivers
Copyright 2000 Sipex Corporation
FEATURES
As in the original RS-232 multi-channel
products, the SP207EH Series high speed
multi-channel RS-232 line transceivers provide
a variety of configurations to fit most designs,
especially high speed applications where +12V
is not available. The SP207EH Series is a
superior high speed drop-in replacement to our
previous versions as well as popular industry
standards.
All devices in this series feature low-power
CMOS construction and Sipex's proprietary
on-board charge pump circuitry to generate the
+10V RS-232 voltage levels. The ability to
use 0.1
F charge pump capacitors saves
board space and reduces production costs.
The devices in this series provide different
driver/receiver combinations to match any
application requirement.
The SP211EH and SP213EH models feature a
lowpower shutdown mode, which reduces
power supply drain to 1
A. The SP213EH
includes a Wake-Up function which keeps two
receivers active in the shutdown mode, unless
disabled by the EN pin.
The family is available in 28pin SO (wide) and
SSOP (shrink) small outline packages. Devices
can be specified for commercial (0
C to +70
C)
and industrial/extended (40
C to +85
C) oper-
ating temperatures.
THEORY OF OPERATION
The SP207EH Series devices are made up of
three basic circuit blocks -- 1) transmitter/
driver, 2) receiver and 3) the SIPEXpropri-
etary charge pump. Each model within the
Series incorporates variations of these circuits
to achieve the desired configuration and
performance.
ChargePump
The charge pump is a Sipexpatented design
(5,306,954) and uses a unique approach
compared to older lessefficient designs. The
charge pump still requires four external capacitors,
but uses a fourphase voltage shifting technique
to attain symmetrical 10V power supplies.
Figure 3a shows the waveform found on the
positive side of capacitor C
2
, and Figure 3b shows
the negative side of capacitor C
2
. There is a
freerunning oscillator that controls the four
phases of the voltage shifting. A description of
each phase follows.
Phase 1
-- V
SS
charge storage --During this phase of the
clock cycle, the positive side of capacitors C
1
and C
2
are initially charged to +5V. C
l
+
is then
switched to ground and the charge in C
1
is
transferred to C
2
. Since C
2
+
is connected to
+5V, the voltage potential across capacitor C
2
is
now 10V.
Phase 2
-- V
SS
transfer -- Phase two of the clock
connects the negative terminal of C
2
to the V
SS
storage capacitor and the positive terminal of C
2
to ground, and transfers the generated l0V to
C
3
. Simultaneously, the positive side of capacitor
C
1
is switched to +5V and the negative side is
connected to ground.
Phase 3
-- V
DD
charge storage -- The third phase of the
clock is identical to the first phase -- the charge
transferred in C
1
produces 5V in the negative
terminal of C
1
, which is applied to the negative
side of capacitor C
2
. Since C
2
+
is at +5V, the
voltage potential across C
2
is l0V.
V
CC
= +5V
5V
5V
+5V
V
SS
Storage Capacitor
V
DD
Storage Capacitor
C
1
C
2
C
3
C
4
+
+
+
+
Figure 1. Charge Pump -- Phase 1
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