ChipFind - документация

Электронный компонент: SP3222EBCT

Скачать:  PDF   ZIP
1
Date: 02/27/05 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers
Copyright 2005 Sipex Corporation
True +3.0V to +5.5V RS-232 Transceivers
SP3222EB/3232EB
DESCRIPTION
FEATURES
Meets true EIA/TIA-232-F Standards
from a +3.0V to +5.5V power supply
250kbps Transmission Rate Under Load
1A Low-Power Shutdown with Receivers
Active (SP3222EB)
Interoperable with RS-232 down to +2.7V
power source
Enhanced ESD Specifications:
15kV Human Body Model
15kV IEC1000-4-2 Air Discharge
8kV IEC1000-4-2 Contact Discharge
SELECTION TABLE
L
E
D
O
M
s
e
i
l
p
p
u
S
r
e
w
o
P
2
3
2
-
S
R
s
r
e
v
i
r
D
2
3
2
-
S
R
s
r
e
v
i
e
c
e
R
l
a
n
r
e
t
x
E
s
t
n
e
n
o
p
m
o
C
n
w
o
d
t
u
h
S
L
T
T
e
t
a
t
S
-
3
f
o
.
o
N
s
n
i
P
B
E
2
2
2
3
P
S
V
5
.
5
+
o
t
V
0
.
3
+
2
2
4
s
e
Y
s
e
Y
0
2
,
8
1
B
E
2
3
2
3
P
S
V
5
.
5
+
o
t
V
0
.
3
+
2
2
4
o
N
o
N
6
1
The SP3222EB/3232EB series is an RS-232 transceiver solution intended for portable or
hand-held applications such as notebook or palmtop computers. The SP3222EB/3232EB
series has a high-efficiency, charge-pump power supply that requires only 0.1F capacitors
in 3.3V operation. This charge pump allows the SP3222EB/3232EB series to deliver true RS-
232 performance from a single power supply ranging from +3.0V to +5.5V. The SP3222EB/
3232EB are 2-driver/2-receiver devices. This series is ideal for portable or hand-held
applications such as notebook or palmtop computers. The ESD tolerance of the SP3222EB/
3232EB devices are over 15kV for both Human Body Model and IEC1000-4-2 Air discharge
test methods. The SP3222EB device has a low-power shutdown mode where the devices'
driver outputs and charge pumps are disabled. During shutdown, the supply current falls to
less than 1A.
V-
1
2
3
4
13
14
15
16
5
6
7
12
11
10
C1+
V+
C1-
C2+
C2-
R1IN
R2IN
GND
V
CC
T1OUT
T2IN
8
9
SP3232EB
T1IN
R1OUT
R2OUT
T2OUT
Now Available in Lead Free Packaging
Date:02/27/05 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers
Copyright 2005 Sipex Corporation
2
NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
NOTE 2: Driver Input hysteresis is typically 250mV.
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional
operation of the device at these ratings or any other
above those indicated in the operation sections of
the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended
periods of time may affect reliability and cause
permanent damage to the device.
V
CC
...................................................... -0.3V to +6.0V
V+ (NOTE 1) ...................................... -0.3V to +7.0V
V- (NOTE 1) ....................................... +0.3V to -7.0V
V+ + |V-| (NOTE 1) ........................................... +13V
I
CC
(DC V
CC
or GND current) ......................... 100mA
Input Voltages
TxIN, EN ............................................ -0.3V to +6.0V
RxIN .................................................................. 25V
Output Voltages
TxOUT ........................................................... 13.2V
RxOUT ..................................... -0.3V to (V
CC
+ 0.3V)
Short-Circuit Duration
TxOUT .................................................... Continuous
Storage Temperature ...................... -65C to +150C
Power Dissipation Per Package
20-pin SSOP (derate 9.25mW/
o
C above +70
o
C) ........ 750mW
18-pin PDIP (derate 15.2mW/
o
C above +70
o
C) ....... 1220mW
18-pin SOIC (derate 15.7mW/
o
C above +70
o
C) ....... 1260mW
20-pin TSSOP (derate 11.1mW/
o
C above +70
o
C) ...... 890mW
16-pin SSOP (derate 9.69mW/
o
C above +70
o
C) ........ 775mW
16-pin PDIP (derate 14.3mW/
o
C above +70
o
C) ....... 1150mW
16-pin Wide SOIC (derate 11.2mW/
o
C above +70
o
C) .... 900mW
16-pin TSSOP (derate 10.5mW/
o
C above +70
o
C) ...... 850mW
16-pin nSOIC (derate 13.57mW/C above +70C) ...... 1086mW
Unless otherwise noted, the following specifications apply for V
CC
= +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
, C
1
to
C
4
=0.1
F
PARAMETER
MIN.
TYP.
MAX.
UNITS
CONDITIONS
DC CHARACTERISTICS
Supply Current
0.3
1.0
mA
no load, T
AMB
= +25C, V
CC
= 3.3V,
TxIN = V
CC
or GND
Shutdown Supply Current
1.0
10
A
SHDN = GND, T
AMB
= +25C,
V
CC
= +3.3V, TxIN = V
CC
or GND
LOGIC INPUTS AND RECEIVER OUTPUTS
Input Logic Threshold LOW
GND
0.8
V
TxIN, EN, SHDN, Note 2
Input Logic Threshold HIGH
2.0
V
CC
V
V
CC
= 3.3V, Note 2
2.4
V
V
CC
= 5.0V, Note 2
Input Leakage Current
0.01
1.0
A
TxIN, EN, SHDN, T
AMB
= +25C,
V
IN
= 0V to V
CC
Output Leakage Current
0.05
10
A
receivers disabled, V
OUT
= 0V to V
CC
Output Voltage LOW
0.4
V
I
OUT
= 1.6mA
Output Voltage HIGH
V
CC
-0.6
V
CC
-0.1
V
I
OUT
= -1.0mA
DRIVER OUTPUTS
Output Voltage Swing
5.0
5.4
V
3k load to ground at all driver
outputs, T
AMB
= +25C
Output Resistance
300
V
CC
= V+ = V- = 0V, T
OUT
= +2V
Output Short-Circuit Current
35
60
mA
V
OUT
= 0V
Output Leakage Current
25
A
V
OUT
= 12V,V
CC
= 0V,
or 3.0V to 5.5V, drivers disabled
ELECTRICAL CHARACTERISTICS
3
Date: 02/27/05 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers
Copyright 2005 Sipex Corporation
R
E
T
E
M
A
R
A
P
.
N
I
M
.
P
Y
T
.
X
A
M
S
T
I
N
U
S
N
O
I
T
I
D
N
O
C
S
T
U
P
N
I
R
E
V
I
E
C
E
R
e
g
n
a
R
e
g
a
tl
o
V
t
u
p
n
I
5
2
-
5
2
+
V
W
O
L
d
l
o
h
s
e
r
h
T
t
u
p
n
I
6
.
0
8
.
0
2
.
1
5
.
1
V
V
C
C
V
3
.
3
=
V
C
C
V
0
.
5
=
H
G
I
H
d
l
o
h
s
e
r
h
T
t
u
p
n
I
5
.
1
8
.
1
4
.
2
4
.
2
V
V
C
C
V
3
.
3
=
V
C
C
V
0
.
5
=
s
i
s
e
r
e
t
s
y
H
t
u
p
n
I
3
.
0
V
e
c
n
a
t
s
i
s
e
R
t
u
p
n
I
3
5
7
k
S
C
I
T
S
I
R
E
T
C
A
R
A
H
C
G
N
I
M
I
T
e
t
a
R
a
t
a
D
m
u
m
i
x
a
M
0
5
2
s
p
b
k
R
L
k
3
= C
,
L
g
n
i
h
c
ti
w
s
r
e
v
i
r
d
e
n
o
,
F
p
0
0
0
1
=
y
a
l
e
D
n
o
it
a
g
a
p
o
r
P
r
e
v
i
e
c
e
R
5
1
.
0
5
1
.
0
s
t
L
H
P
C
,
T
U
O
x
R
o
t
N
I
x
R
,
L
F
p
0
5
1
=
t
H
L
P
C
,
T
U
O
x
R
o
t
N
I
x
R
,
L
F
p
0
5
1
=
e
m
i
T
e
l
b
a
n
E
t
u
p
t
u
O
r
e
v
i
e
c
e
R
0
0
2
s
n
e
m
i
T
e
l
b
a
s
i
D
t
u
p
t
u
O
r
e
v
i
e
c
e
R
0
0
2
s
n
w
e
k
S
r
e
v
i
r
D
0
0
1
s
n
t
|
L
H
P
t
-
H
L
P
T
,|
B
M
A
5
2
=
o
C
w
e
k
S
r
e
v
i
e
c
e
R
0
5
s
n
t
|
L
H
P
t
-
H
L
P
|
e
t
a
R
w
e
l
S
n
o
i
g
e
R
-
n
o
it
i
s
n
a
r
T
0
3
/
V s
V
C
C
R
,
V
3
.
3
=
L
K
3
=
T
,
B
M
A
5
2
=
o
,
C
V
0
.
3
+
o
t
V
0
.
3
-
m
o
r
f
n
e
k
a
t
s
t
n
e
m
e
r
u
s
a
e
m
V
0
.
3
-
o
t
V
0
.
3
+
r
o
Unless otherwise noted, the following specifications apply for V
CC
= +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
, C
1
to
C
4
=0.1
F. Typical Values apply at V
CC
= +3.3V or +5.5V and T
AMB
= 25
o
C.
ELECTRICAL CHARACTERISTICS
Date:02/27/05 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers
Copyright 2005 Sipex Corporation
4
Figure 1. Transmitter Output Voltage vs Load
Capacitance.
Figure 2. Slew Rate vs Load Capacitance.
Figure 3. Supply Current vs Load Capacitance when
Transmitting Data.
Unless otherwise noted, the following performance characteristics apply for V
CC
= +3.3V, 250kbps data rates, all drivers
loaded with 3k
, 0.1F charge pump capacitors, and T
AMB
= +25
C.
30
25
20
15
10
5
0
0
500
1000
2000
3000
4000
5000
Slew rate (V/s)
Load Capacitance (pF)
- Slew
+ Slew
T1 at 250Kbps
T2 at 15.6Kbps
All TX loaded 3K // CLoad
Figure 4. Supply Current vs Supply Voltage.
6
4
2
0
-2
-4
-6
2.7
3
3.5
4
4.5
5
Supply Voltage (V)
Transmitter Output
Voltage (V)
TxOUT -
TxOUT +
T1 at 250Kbps
T2 at 15.6Kbps
All TX loaded 3K // 1000 pF
Figure 5. Transmitter Output Voltage vs Supply
Voltage.
35
30
25
20
15
10
5
0
Supply Current (mA)
Load Capacitance (pF)
0
1000
2000
3000
4000
5000
250Kbps
125Kbps
20Kbps
T1 at Full Data Rate
T2 at 1/16 Data Rate
All TX loaded 3K // CLoad
6
4
2
0
-2
-4
-6
0
1000
2000
3000
4000
5000
TxOUT +
TxOUT -
Transmitter Output
Voltage (V)
Load Capacitance (pF)
T1 at 250Kbps
T2 at 15.6Kbps
All TX loaded 3K // CLoad
16
14
12
10
8
6
4
2
0
2.7
3
3.5
4
4.5
5
Supply Current (mA)
Supply Voltage (V)
1 Transmitter at 250Kbps
1 Transmitter at 15.6Kbps
All transmitters loaded with 3K // 1000pf
TYPICAL PERFORMANCE CHARACTERISTICS
5
Date: 02/27/05 SP3222EB/3232EB True +3.0 to +5.5V RS-232 Transceivers
Copyright 2005 Sipex Corporation
E
M
A
N
N
O
I
T
C
N
U
F
R
E
B
M
U
N
N
I
P
B
E
2
2
2
3
P
S
B
E
2
3
2
3
P
S
O
S
/
P
I
D
P
O
S
S
P
O
S
S
T
N
E
.
n
o
it
a
r
e
p
o
l
a
m
r
o
n
r
o
f
W
O
L
c
i
g
o
l
y
l
p
p
A
.
e
l
b
a
n
E
r
e
v
i
e
c
e
R
.
)
e
t
a
t
s
Z
-
h
g
i
h
(
s
t
u
p
t
u
o
r
e
v
i
e
c
e
r
e
h
t
e
l
b
a
s
i
d
o
t
H
G
I
H
c
i
g
o
l
y
l
p
p
A
1
1
-
+
1
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
r
e
l
b
u
o
d
e
g
a
tl
o
v
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
i
s
o
P
2
2
1
+
V
.
p
m
u
p
e
g
r
a
h
c
e
h
t
y
b
d
e
t
a
r
e
n
e
g
V
5
.
5
+
3
3
2
-
1
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
r
e
l
b
u
o
d
e
g
a
tl
o
v
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
a
g
e
N
4
4
3
+
2
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
g
n
it
r
e
v
n
i
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
i
s
o
P
5
5
4
-
2
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
g
n
it
r
e
v
n
i
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
a
g
e
N
6
6
5
-
V
.
p
m
u
p
e
g
r
a
h
c
e
h
t
y
b
d
e
t
a
r
e
n
e
g
V
5
.
5
-
7
7
6
T
U
O
1
T
.
t
u
p
t
u
o
r
e
v
i
r
d
2
3
2
-
S
R
5
1
7
1
4
1
T
U
O
2
T
.
t
u
p
t
u
o
r
e
v
i
r
d
2
3
2
-
S
R
8
8
7
N
I
1
R
.
t
u
p
n
i
r
e
v
i
e
c
e
r
2
3
2
-
S
R
4
1
6
1
3
1
N
I
2
R
.
t
u
p
n
i
r
e
v
i
e
c
e
r
2
3
2
-
S
R
9
9
8
T
U
O
1
R
.
t
u
p
t
u
o
r
e
v
e
i
c
e
r
S
O
M
C
/
L
T
T
3
1
5
1
2
1
T
U
O
2
R
.
t
u
p
t
u
o
r
e
v
e
i
c
e
r
S
O
M
C
/
L
T
T
0
1
0
1
9
N
I
1
T
.
t
u
p
n
i
r
e
v
i
r
d
S
O
M
C
/
L
T
T
2
1
3
1
1
1
N
I
2
T
.
t
u
p
n
i
r
e
v
i
r
d
S
O
M
C
/
L
T
T
1
1
2
1
0
1
D
N
G
.
d
n
u
o
r
G
6
1
8
1
5
1
V
C
C
e
g
a
tl
o
v
y
l
p
p
u
s
V
5
.
5
+
o
t
V
0
.
3
+
7
1
9
1
6
1
N
D
H
S
.
n
o
it
a
r
e
p
o
e
c
i
v
e
d
l
a
m
r
o
n
r
o
f
H
G
I
H
e
v
i
r
D
.
t
u
p
n
I
l
o
r
t
n
o
C
n
w
o
d
t
u
h
S
-
n
o
e
h
t
d
n
a
)
t
u
p
t
u
o
Z
-
h
g
i
h
(
s
r
e
v
i
r
d
e
h
t
n
w
o
d
t
u
h
s
o
t
W
O
L
e
v
i
r
D
.
y
l
p
p
u
s
r
e
w
o
p
d
r
a
o
b
8
1
0
2
-
.
C
.
N
.
t
c
e
n
n
o
C
o
N
-
4
1
,
1
1
-
Table 1. Device Pin Description
PIN DESCRIPTION