ChipFind - документация

Электронный компонент: SP3222EUCA

Скачать:  PDF   ZIP
1
Rev. A Date:12/11/03 SP3222EU/3232EU 3.3V, 1000Kbps RS-232 Transceivers
Copyright 2003 Sipex Corporation
3.3V, 1000 Kbps RS-232 Transceivers
SP3222EU/3232EU
DESCRIPTION
Meets true EIA/TIA-232-F Standards
from a +3.0V to +5.5V power supply
Interoperable with EIA/TIA - 232 and
adheres to EIA/TIA - 562 down to a +2.7V
power source
1
A Low-Power Shutdown with Receivers
Active (SP3222EU)
Enhanced ESD Specifications:
15kV Human Body Model
15kV IEC1000-4-2 Air Discharge
8kV IEC1000-4-2 Contact Discharge
1000 kbps Minimum Transmission Rate
Ideal for Handheld, Battery Operated
Applications
SELECTION TABLE
L
E
D
O
M
s
e
i
l
p
p
u
S
r
e
w
o
P
2
3
2
-
S
R
s
r
e
v
i
r
D
2
3
2
-
S
R
s
r
e
v
i
e
c
e
R
l
a
n
r
e
t
x
E
s
t
n
e
n
o
p
m
o
C
n
w
o
d
t
u
h
S
L
T
T
e
t
a
t
S
-
3
f
o
.
o
N
s
n
i
P
U
E
2
2
2
3
P
S
V
5
.
5
+
o
t
V
0
.
3
+
2
2
4
s
e
Y
s
e
Y
0
2
,
8
1
U
E
2
3
2
3
P
S
V
5
.
5
+
o
t
V
0
.
3
+
2
2
4
o
N
o
N
6
1
The SP3222EU and the SP3232EU are 2 driver, 2 receiver RS-232 transceiver solutions
intended for portable or hand-held applications such as notebook or palmtop computers.
Their data transmission rate of 1000 kbps meets the demands of high speed RS-232
applications. Both ICs have a high-efficiency, charge-pump power supply that requires
only 0.1
F capacitors in 3.3V operation. This charge pump allows the SP3222EU and the
3232EU to deliver true RS-232 performance from a single power supply ranging from
+3.0V to +5.5V. The ESD tolerance of the SP3222EU/3232EU devices are over
15kV
for both Human Body Model and IEC1000-4-2 Air discharge test methods.
The SP3222EU device has a low-power shutdown mode where the devices' driver
outputs and charge pumps are disabled. During shutdown, the supply current falls to less
than 1uA.
Rev. A Date:12/11/03 SP3222EU/3232EU 3.3V, 1000kbps RS-232 Transceivers
Copyright 2003 Sipex Corporation
2
NOTE 1: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional
operation of the device at these ratings or any other
above those indicated in the operation sections of
the specifications below is not implied. Exposure to
absolute maximum rating conditions for extended
periods of time may affect reliability and cause
permanent damage to the device.
V
CC
...................................................... -0.3V to +6.0V
V+ (NOTE 1) ...................................... -0.3V to +7.0V
V- (NOTE 1) ....................................... +0.3V to -7.0V
V+ + |V-| (NOTE 1) ........................................... +13V
I
CC
(DC V
CC
or GND current) .........................
100mA
Input Voltages
TxIN, EN ............................................ -0.3V to +6.0V
RxIN ..................................................................
25V
Output Voltages
TxOUT.......................................................
13.2V
RxOUT............. ..................-0.3V to (V
CC
+ 0.3V)
Short-Circuit Duration
TxOUT.................................................Continuous
Storage Temperature.................-65
C to +150
C
Power Dissipation Per Package
20-pin SSOP (derate 9.25mW/
o
C above +70
o
C) ........ 750mW
18-pin PDIP (derate 15.2mW/
o
C above +70
o
C) ....... 1220mW
18-pin SOIC (derate 15.7mW/
o
C above +70
o
C) ....... 1260mW
20-pin TSSOP (derate 11.1mW/
o
C above +70
o
C) ...... 890mW
16-pin SSOP (derate 9.69mW/
o
C above +70
o
C) ........ 775mW
16-pin PDIP (derate 14.3mW/
o
C above +70
o
C) ....... 1150mW
16-pin Wide SOIC (derate 11.2mW/
o
C above +70
o
C) .... 900mW
16-pin TSSOP (derate 10.5mW/
o
C above +70
o
C) ...... 850mW
16-pin nSOIC (derate 13.57mW/
C above +70
C) ...... 1086mW
SPECIFICATIONS
Unless otherwise noted, the following specifications apply for V
CC
= +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
, C
1
to
C
4
=0.1
F
PARAMETER
MIN.
TYP.
MAX. UNITS
CONDITIONS
DC CHARACTERISTICS
Supply Current
0.3
1.0
mA
no load, T
AMB
= +25
C, V
CC
= 3.3V,
TxIN = GND or V
CC
Shutdown Supply Current
1.0
10
A
SHDN = GND,T
AMB
= +25
C,
V
CC
= +3.3V, TxIN = GND or V
CC
LOGIC INPUTS AND RECEIVER OUTPUTS
Input Logic Threshold LOW
GND
0.8
V
TxIN, EN, SHDN, Note 2
Input Logic Threshold HIGH
2.0
V
V
CC
= 3.3V, Note2
2.4
V
CC
V
CC
= 5.0V, Note 2
Input Leakage Current
0.01
1.0
A
TxIN, EN, SHDN, T
AMB
= +25
C,
VIN= 0V to V
CC
Output Leakage Current
0.05
10
A
receivers disabled, V
OUT
= 0V to V
CC
Output Voltage LOW
0.4
V
I
OUT
= 1.6mA
Output Voltage HIGH
V
CC
-0.6
V
CC
-0.1
V
I
OUT
= -1.0mA
DRIVER OUTPUTS
Output Voltage Swing
5.0
5.4
V
3k
load to ground at all driver
outputs,T
AMB
= +25
C
Output Resistance
300
V
CC
= V+ = V- = 0V, T
OUT
= +2V
Output Short-Circuit Current
35
60
mA
V
OUT
= 0V
Output Leakage Current
25
A
V
OUT
= +12V,V
CC
= 0V to 5.5V,drivers
disabled
3
Rev. A Date:12/11/03 SP3222EU/3232EU 3.3V, 1000Kbps RS-232 Transceivers
Copyright 2003 Sipex Corporation
SPECIFICATIONS (continued)
Unless otherwise noted, the following specifications apply for V
CC
= +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
, C
1
to
C
4
=0.1
F. Typical Values apply at V
CC
= +3.3V or +5.5V and T
AMB
= 25
o
C.
NOTE 2: Driver input hysteresis is typically 250mV.
PARAMETER
MIN.
TYP.
MAX.
UNITS
CONDITIONS
RECEIVER INPUTS
Input Voltage Range
-25
+25
V
Input Threshold LOW
0.6
1.2
V
V
CC
=3.3V
0.8
1.5
V
V
CC
=5.0V
Input Threshold HIGH
1.5
2.4
V
V
CC
=3.3V
1.8
2.4
V
V
CC
=5.0V
Input Hysteresis
0.3
V
Input Resistance
3
5
7
k
TIMING CHARACTERISTICS
Maximum Data Rate
1000
kbps
R
L
=3k
, C
L
=250pF, one driver
switching
Receiver Propagation Delay
0.15
s
t
PHL
, RxIN to RxOUT, C
L
=150pF
0.15
t
PLH
, RxIN to RxOUT, C
L
=150pF
Receiver Output Enable Time
200
ns
Receiver Output Disable Time
200
ns
Driver Skew
100
ns
| t
PHL
- t
PLH
|, T
AMB
= 25
C
Receiver Skew
50
ns
| t
PHL
- t
PLH
|
Transition-Region Slew Rate
90
V/
s
V
CC
= 3.3V, R
L
= 3K
, T
AMB
= 25
C,
measurements taken from -3.0V to
+3.0V or +3.0V to -3.0V
Rev. A Date:12/11/03 SP3222EU/3232EU 3.3V, 1000kbps RS-232 Transceivers
Copyright 2003 Sipex Corporation
4
Figure 1. Transmitter Output Voltage vs Load
Capacitance for the SP3222EU and the SP3232EU
Figure 2. Slew Rate vs Load Capacitance for the
SP3222EU and the SP3232EU
Figure 3. Supply Current vs Load Capacitance when
Transmitting Data for the SP3222EU and the SP3232EU
TYPICAL PERFORMANCE CHARACTERISTICS
Unless otherwise noted, the following performance characteristics apply for V
CC
= +3.3V, 1000kbps data rates, all drivers
loaded with 3k
, 0.1F charge pump capacitors, and T
AMB
= +25
C.
0
250
500
1000
1500
Load Capacitance (pF)
T
ransmitter
Output V
oltage (V)
6
4
2
0
-2
-4
-6
T1 at 1Mbps
T2 at 62.5Kbps
0
250
500
1000
1500
2000
Load Capacitance (pF)
Slew Rate (V /
s)
120
100
80
60
40
20
0
T1 at 1Mbps
T2 at 62.5Kbps
All TX loaded 3K // CLoad
0
250
500
1000
1500
Load Capacitance (pF)
Supply Current (mA)
35
30
20
15
10
5
0
T1 at 1Mbps
T2 at 62.5Kbps
2.7
3
3.5
4
4.5
5
Supply Voltage (V)
Supply Current (mA)
20
15
10
5
0
T1 at Mbps
T2 at 62.5Kbps
2.7
3
3.5
4
4.5
5
Supply Voltage (V)
T
ransmitter Output
V
oltage (V)
6
4
2
0
-2
-4
-6
T1 at 1Mbps
T2 at 62.5Kbps
0
250
500
1000
1500
2000
200
150
100
50
0
Load Capacitance (pF)
Skew (nS)
T1 at 500Kbps
T2 at 31.2Kbps
All TX loaded 3K // CLoad
Figure 4. Supply Current vs Supply Voltage for the
SP3222EU and the SP3232EU
Figure 5. Transmitter Output Voltage vs Supply Voltage
for the SP3222EU and the SP3232EU
Figure 6. Transmitter Skew vs Load Capacitance for the
SP3222EU and the SP3232EU
5
Rev. A Date:12/11/03 SP3222EU/3232EU 3.3V, 1000Kbps RS-232 Transceivers
Copyright 2003 Sipex Corporation
E
M
A
N
N
O
I
T
C
N
U
F
R
E
B
M
U
N
N
I
P
U
E
2
2
2
3
P
S
U
E
2
3
2
3
P
S
O
S
/
P
I
D
P
O
S
S
P
O
S
S
T
N
E
.
n
o
it
a
r
e
p
o
l
a
m
r
o
n
r
o
f
W
O
L
c
i
g
o
l
y
l
p
p
A
.
e
l
b
a
n
E
r
e
v
i
e
c
e
R
.
)
e
t
a
t
s
Z
-
h
g
i
h
(
s
t
u
p
t
u
o
r
e
v
i
e
c
e
r
e
h
t
e
l
b
a
s
i
d
o
t
H
G
I
H
c
i
g
o
l
y
l
p
p
A
1
1
-
+
1
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
r
e
l
b
u
o
d
e
g
a
tl
o
v
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
i
s
o
P
2
2
1
+
V
.
p
m
u
p
e
g
r
a
h
c
e
h
t
y
b
d
e
t
a
r
e
n
e
g
V
5
.
5
+
3
3
2
-
1
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
r
e
l
b
u
o
d
e
g
a
tl
o
v
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
a
g
e
N
4
4
3
+
2
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
g
n
it
r
e
v
n
i
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
i
s
o
P
5
5
4
-
2
C
.
r
o
ti
c
a
p
a
c
p
m
u
p
-
e
g
r
a
h
c
g
n
it
r
e
v
n
i
e
h
t
f
o
l
a
n
i
m
r
e
t
e
v
it
a
g
e
N
6
6
5
-
V
.
p
m
u
p
e
g
r
a
h
c
e
h
t
y
b
d
e
t
a
r
e
n
e
g
V
5
.
5
-
7
7
6
T
U
O
1
T
.
t
u
p
t
u
o
r
e
v
i
r
d
2
3
2
-
S
R
5
1
7
1
4
1
T
U
O
2
T
.
t
u
p
t
u
o
r
e
v
i
r
d
2
3
2
-
S
R
8
8
7
N
I
1
R
.
t
u
p
n
i
r
e
v
i
e
c
e
r
2
3
2
-
S
R
4
1
6
1
3
1
N
I
2
R
.
t
u
p
n
i
r
e
v
i
e
c
e
r
2
3
2
-
S
R
9
9
8
T
U
O
1
R
.
t
u
p
t
u
o
r
e
v
e
i
c
e
r
S
O
M
C
/
L
T
T
3
1
5
1
2
1
T
U
O
2
R
.
t
u
p
t
u
o
r
e
v
e
i
c
e
r
S
O
M
C
/
L
T
T
0
1
0
1
9
N
I
1
T
.
t
u
p
n
i
r
e
v
i
r
d
S
O
M
C
/
L
T
T
2
1
3
1
1
1
N
I
2
T
.
t
u
p
n
i
r
e
v
i
r
d
S
O
M
C
/
L
T
T
1
1
2
1
0
1
D
N
G
.
d
n
u
o
r
G
6
1
8
1
5
1
V
C
C
e
g
a
tl
o
v
y
l
p
p
u
s
V
5
.
5
+
o
t
V
0
.
3
+
7
1
9
1
6
1
N
D
H
S
.
n
o
it
a
r
e
p
o
e
c
i
v
e
d
l
a
m
r
o
n
r
o
f
H
G
I
H
e
v
i
r
D
.
t
u
p
n
I
l
o
r
t
n
o
C
n
w
o
d
t
u
h
S
-
n
o
e
h
t
d
n
a
)
t
u
p
t
u
o
Z
-
h
g
i
h
(
s
r
e
v
i
r
d
e
h
t
n
w
o
d
t
u
h
s
o
t
W
O
L
e
v
i
r
D
.
y
l
p
p
u
s
r
e
w
o
p
d
r
a
o
b
8
1
0
2
-
.
C
.
N
.
t
c
e
n
n
o
C
o
N
-
4
1
,
1
1
-
Table 1. Device Pin Description