1N 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
August 1999 Ed: 1A
Symbol
Parameter
Value
Unit
V
RRM
Repetitive Peak Reverse Voltage
60
V
I
F
Forward Continuous Current*
T
a
= 25
C
15
mA
I
FSM
Surge non Repetitive Forward Current*
t
p
1s
50
mA
T
stg
T
j
Storage and Junction Temperature Range
- 65 to 200
- 65 to 200
C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
C
ABSOLUTE RATINGS (limiting values)
Symbol
Test Conditions
Value
Unit
R
th(j-a)
Junction-ambient*
400
C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
** Pulse test: t
p
300
s
<
2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
V
BR
T
amb
= 25
C
I
R
= 10
A
60
V
V
F
* *
T
amb
= 25
C
I
F
= 1mA
0.41
V
T
amb
= 25
C
I
F
= 15mA
1
I
R
* *
T
amb
= 25
C
V
R
= 50V
0.2
A
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
C
T
amb
= 25
C
V
R
= 0V
f = 1MHz
2.2
pF
T
amb
= 25
C
I
F
= 5mA
Krakauer Method
100
ps
DYNAMIC CHARACTERISTICS
DO 35
(Glass)
1/3
2/3
Fig.1 : Forward current versus forward voltage
(typical values).
Fig.2 : Capacitance C versus reverse applied
voltage V
R
(typical values).
Fi g . 3 : Reverse current versus ambient
temperature.
Fig.4 : Reverse current versus continuous
reverse voltage (typical values).
1N 6263
Cooling method : by convection and conduction
Marking: clear, ring at cathode end.
Weight: 0.15g
PACKAGE MECHANICAL DATA
DO 35 Glass
C
A
B
O
/
O
/
D
O
/
D
C
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
3.05
4.50
0.120
0.177
B
1.53
2.00
0.060
0.079
C
12.7
0.500
D
0.458
0.558
0.018
0.022
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use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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of STMicroelectronics.
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1999 STMicroelectronics - Printed in Italy - All rights reserved.
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1N 6263
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