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Электронный компонент: 2N5191

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2N5191
2N5192
MEDIUM POWER NPN SILICON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5191 and 2N5192 are silicon
epitaxial-base NPN transistors in Jedec SOT-32
plastic package.
They are inteded for use in medium power linear
and switching applications.
The complementary PNP type of 2N5192 is
2N5195.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N5191
2N5192
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
60
80
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
60
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current
7
A
I
B
Base Current
1
A
P
tot
Total Dissipation at T
c
25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
3
2
1
SOT-32
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.12
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= rated V
CBO
0.1
mA
I
CEX
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= rated V
CEO
V
CE
= rated V
CEO
T
c
= 125
o
C
0.1
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= rated V
CEO
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA
for 2N5191
for 2N5192
60
80
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1.5 A I
B
= 0.15 A
I
C
= 4 A I
B
= 1 A
0.6
1.4
V
V
V
BE
Base-Emitter Voltage
I
C
= 1.5 A V
CE
= 2 V
1.2
V
h
FE
DC Current Gain
I
C
= 1.5 A V
CE
= 2 V
for 2N5191
for 2N5192
I
C
= 4 A V
CE
= 2 V
for 2N5191
for 2N5192
25
20
10
7
100
80
f
T
Transition frequency
I
C
= 1 A V
CE
= 10 V
2
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
2N5191 / 2N5192
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
2N5191 / 2N5192
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N5191 / 2N5192
4/4