2N5415S
October 1988
HIGH-VOLTAGE AMPLIFIER
The 2N5415S is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case, intended for high
vol-tage switching and linear amplifier applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
200
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
200
V
V
EBO
Emitter-base Voltage (I
C
= 0)
4
V
I
CM
Collector Peak Current
1
A
P
t o t
Total Power Dissipation at T
amb
25
C
at T
cas e
25
C
1
10
W
W
T
st g
, T
j
Storage and Junction Temperature
55 to 200
C
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM
TO-39
1/4
ELECTRICAL CHARACTERISTICS (T
amb
= 25
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Mi n.
Typ.
Max.
Unit
I
CBO
Collector Cutoff Current
(I
E
= 0)
V
CB
= 175 V
50
A
I
CEO
Collector Cutoff Current
(I
B
= 0)
V
CE
= 150 V
50
A
I
E BO
Emitter Cutoff Current
(I
C
= 0)
V
EB
= 4 V
20
A
V(
BR) CEO
*
Collector-emitter
Breakdown Voltage
(I
B
= 0)
I
C
= 2 mA
200
V
V
CE( sat )
*
Collector-emitter
Saturation Voltage
I
C
= 50 mA
I
B
= 5 mA
2.5
V
V
B E
*
Base-Emitter Voltage
I
C
= 50 mA
V
CE
= 10 V
1.5
V
h
F E
*
DC Current Gain
I
C
= 50 A
V
CE
= 10 V
30
150
f
T
Transition Frequency
I
C
= 10 mA
f = 5 MHz
V
CE
= 10 V
15
MHz
C
CBO
Collector-base
Capacitance
I
E
= 0
f = 1 MHz
V
CB
= 10 V
15
pF
* Pulsed : pulse duration = 300
s, duty cycle = 1 %.
THERMAL DATA
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
17.5
175
C/W
C/W
2N5415S
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45
o
(typ.)
L
G
I
D
A
F
E
B
H
TO39 MECHANICAL DATA
P008B
2N5415S
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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