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2N6107
2N6111
SILICON PNP SWITCHING TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
PNP TRANSISTORS
APPLICATIONS:
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6107 and 2N6111 are epitaxial-base PNP
silicon transistors in Jedec TO-220 plastic
package. They are intended for a wide variety of
medium power switching and linear applications.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
2N6107
2N6111
V
CBO
Collector-Base Voltage (I
E
= 0)
80
40
V
V
CEX
Collector-Emitter Voltage (R
BE
= 100
)
80
40
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
70
30
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
7
A
I
B
Base Current
3
A
P
tot
Total Dissipation at T
c
= 25
o
C
40
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
For PNP devices voltage and current values are negative
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
3.12
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient Max
70
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current (V
BE
= - 1.5V)
for 2N6107 V
CE
= 80 V
for 2N6111 V
CE
= 40 V
T
C
= 150
o
C
for 2N6107 V
CE
= 70 V
for 2N6111 V
CE
= 30 V
0.1
0.1
2
2
mA
mA
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
for 2N6107 V
CE
= 60 V
for 2N6111 V
CE
= 20 V
1
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-emitter
Sustaining Voltage
I
C
= 0.1 A
for 2N6107
for 2N6111
70
30
V
V
V
CER(sus)
Collector-emitter
Sustaining Voltage
I
C
= 0.1 A R
BE
= 100
for 2N6107
for 2N6111
80
40
V
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 3 A I
B
= 0.3 A for 2N6107
I
C
= 2 A I
B
= 0.2 A for 2N6111
I
C
= 7 A I
B
= 3.0 A
1
1
3.5
V
V
V
V
BE(on)
Base-emitter Voltage
I
C
= 3 A V
CE
= 4 V for 2N6107
I
C
= 2 A V
CE
= 4 V for 2N6111
I
C
= 7 A V
CE
= 4 V
1.5
1.5
3
V
V
V
h
FE
DC Current Gain
I
C
= 3 A V
CE
= 4 V for 2N6107
I
C
= 2 A V
CE
= 4 V for 2N6111
I
C
= 7 A V
CE
= 4 V
30
30
2.3
150
150
h
fe
Small Signal Current
Gain
I
C
= 0.5 A V
CE
= 4 V f = 50 KHz
20
f
T
Transition-Frequency
I
C
= 0.5 A V
CE
= 4 V
4
MHz
C
cbo
Collector-base
Capacitance
V
CB
= 10 V f = 1 MHz
250
pF
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
For PNP types voltage and current values are negative.
For characteristic curves see the bd534 (PNP) series.
2N6107/2N6111
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
2N6107/2N6111
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
2N6107/2N6111
4/4