August 1992
SPECIALITY AVIONICS/JTIDS APPLICATIONS
RF & MICROWAVE TRANSISTORS
.400 x .400 2LFL (S036)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
15:1 VSWR CAPABILITY
.
LOW RF THERMAL RESISTANCE
.
INPUT/OUTPUT MATCHING
.
OVERLAY GEOMETRY
.
METAL/CERAMIC HERMETIC PACKAGE
.
P
OUT
=
30 W MIN. WITH 7.8 dB GAIN
DESCRIPTION
The AM80912-030 device is a high power Class C
transistor specifically designed for JTIDS pulsed out-
put and driver applications.
This device is capable of operation over a wide range
of pulse widths, duty cycles and temperatures and is
capable of withstanding 15:1 output VSWR at rated
RF conditions.
Low RF thermal resistance and computerized auto-
matic wire bonding techniques ensure high reliability
and product consistency.
The AM80912-030 is supplied in the hermetic met-
al/ceramic package with internal input matching
structures.
PIN CONNECTION
BRANDING
80912-30
ORDER CODE
AM80912-030
ABSOLUTE MAXIMUM RATINGS (T
case
=
25
C)
R
TH(j-c)
Junction-Case Thermal Resistance
2.2
C/W
*Applies only to rated RF amplifier operation.
AM80912-030
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
Symbol
Parameter
Value
Uni t
P
DISS
Power Dissipation*
(T
C
85
C)
75
W
I
C
Collector Current*
3.5
A
V
CC
Collector-Supply Voltage*
40
V
T
J
Junction Temperature (Pulsed RF Operation)
250
C
T
STG
Storage Temperature
-
65 to +200
C
1/6
ELECTRICAL SPECIFICATIONS (T
case
=
25
C)
Symbol
Test Conditions
Value
Unit
Min .
Typ.
Max.
P
OUT
f
=
960 -- 1215MHz
P
IN
=
5.0W
V
CC
=
+35V
30
36
--
W
C
f
=
960 -- 1215MHz
P
IN
=
5.0W
V
CC
=
+35V
40
45
--
%
G
P
f
=
960 -- 1215MHz
P
IN
=
5.0W
V
CC
=
+35V
7.8
8.6
--
dB
N ote:
Pul se format:
6.4
s on 6. 6
s off, repeat f or 3.3 ms, then off for 4.5125 ms.
Duty Cycle:
Burst 49.2%, overall 20.8%
STATIC
DYNAMIC
Symbol
Test Conditions
Value
Unit
Min .
Typ.
Max.
BV
CBO
I
C
=
10mA
55
--
--
V
BV
EBO
I
E
=
1mA
3.5
--
--
V
BV
CER
I
C
=
20mA
R
BE
=
10
55
--
--
V
I
CES
V
CE
=
35V
--
--
5.0
mA
h
FE
V
CE
=
5V
I
C
=
1.0A
15
--
150
--
AM80912-030
2/6
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