ChipFind - документация

Электронный компонент: BD139

Скачать:  PDF   ZIP
BD135
BD139
NPN SILICON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD135 and BD139 are silicon epitaxial
planar NPN transistors in Jedec SOT-32 plastic
package, designed for audio amplifiers and
drivers
utilizing
complementary
or
quasi
compementary circuits.
The complementary PNP types are BD136 and
BD140 respectively.
INTERNAL SCHEMATIC DIAGRAM
May 1999
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
BD135
BD139
V
CBO
Collect or-Base Voltage (I
E
= 0)
45
80
V
V
CEO
Collect or-Emitter Voltage (I
B
= 0)
45
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collect or Current
1.5
A
I
CM
Collect or Peak Current
3
A
I
B
Base Current
0.5
A
P
t ot
Tot al Dissipation at T
c
25
o
C
12. 5
W
P
t ot
Tot al Dissipation at T
a mb
25
o
C
1. 25
W
T
stg
Storage T emperat ure
-65 to 150
o
C
T
j
Max. O perating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
10
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collector Cut -of f
Current (I
E
= 0)
V
CB
= 30 V
V
CB
= 30 V
T
C
= 125
o
C
0.1
10
A
A
I
EBO
Emitt er Cut -of f Current
(I
C
= 0)
V
EB
= 5 V
10
A
V
CEO(sus )
Collector-Emit ter
Sustaining Voltage
I
C
= 30 mA
for BD135
for BD139
45
80
V
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 0. 5 A
I
B
= 0. 05 A
0.5
V
V
BE
Base-Emitt er Voltage
I
C
= 0. 5 A
V
CE
= 2 V
1
V
h
F E
DC Current Gain
I
C
= 5 mA
V
CE
= 2 V
I
C
= 0. 5 A
V
CE
= 2 V
I
C
= 150 mA
V
CE
= 2 V
25
25
40
250
h
FE
h
FE
Groups
I
C
= 150 mA
V
CE
= 2 V
for BD139 group 10
63
160
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
BD135 / BD139
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
c1
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD135 / BD139
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
BD135 / BD139
4/4