BD179
NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
APPLICATION
s
GENERAL PURPOSE SWITCHING
DESCRIPTION
The BD179 is a silicon epitaxial planar NPN
transistor in Jedec SOT-32 plastic package,
designed for medium power linear and switching
applications.
INTERNAL SCHEMATIC DIAGRAM
September 1997
3
2
1
SOT-32
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CBO
Collector-Base Voltage (I
E
= 0)
80
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
B
Base Current
7
A
P
t ot
Tot al Dissipation at T
c
25
o
C
30
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1/5
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
4.16
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= 80 V
100
A
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 100 mA
80
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 1 A
I
B
= 0.1 A
0.8
V
V
BE
Base-Emitt er Voltage
I
C
= 1 A
V
CE
= 2 V
1.3
V
h
FE
DC Current G ain
I
C
= 150 mA
V
CE
= 2 V
I
C
= 1 A
V
CE
= 2 V
40
15
h
FE
h
FE
G roups
I
C
= 150 mA
V
CE
= 2 V
group 16
100
250
f
T
Transit ion F requency
I
C
= 250 mA
V
CE
= 10 V
3
MHz
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Area
Derating Curves
BD179
2/5
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
BD179
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
7.4
7.8
0.291
0.307
B
10.5
10.8
0.413
0.445
b
0.7
0.9
0.028
0.035
b1
0.49
0.75
0.019
0.030
C
2.4
2.7
0.040
0.106
c1
1.0
1.3
0.039
0.050
D
15.4
16.0
0.606
0.629
e
2.2
0.087
e3
4.15
4.65
0.163
0.183
F
3.8
0.150
G
3
3.2
0.118
0.126
H
2.54
0.100
H2
2.15
0.084
H2
0016114
SOT-32 (TO-126) MECHANICAL DATA
BD179
4/5
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BD179
5/5
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