BD241BFP
BD242BFP
COMPLEMENTARY SILICON POWER TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
COMPLEMENTARY PNP - NPN DEVICES
s
FULLY MOLDED ISOLATED PACKAGE
s
2000 V DC ISOLATION (U.L. COMPLIANT)
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The BD241BFP is silicon epitaxial-base NPN
transistors mounted in TO-220FP fully molded
isolated package.
It is inteded for power linear and switching
applications.
The complementary PNP types is the BD242BFP.
INTERNAL SCHEMATIC DIAGRAM
April 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
NPN
BD241BFP
PNP
BD242BFP
V
CER
Collector-Base Voltage (R
BE
= 100
)
90
V
V
CEO
Collector-Emit ter Voltage (I
B
= 0)
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current
5
A
I
B
Base Current
1
A
P
t ot
Tot al Dissipation at T
c
25
o
C
24
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
For PNP types voltage and current values are negative.
1
2
3
TO-220FP
1/4
THERMAL DATA
R
t hj-ca se
Thermal Resistance Junction-case
Max
5.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= 60 V
0.3
mA
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 80 V
0.2
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 30 mA
80
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 3 A
I
B
= 0.6 A
1.2
V
V
BE(ON)
Base-Emitt er Voltage
I
C
= 3 A
V
CE
= 4 V
1.8
V
h
FE*
DC Current G ain
I
C
= 1 A
V
CE
= 4 V
I
C
= 3 A
V
CE
= 4 V
25
10
Pulsed: Pulse duration = 300
s, duty cycle
2 %
For PNP types voltage and current values are negative.
BD241BFP / BD242BFP
2/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BD241BFP / BD242BFP
4/4
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