BDW83C
BDW84C
COMPLEMENTARY SILICON POWER DARLINGTON
TRANSISTORS
s
BDW83C IS A SGS-THOMSON PREFERRED
SALESTYPE
s
COMPLEMENTARY PNP - NPN DEVICES
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
HIGH DC CURRENT GAIN
APPLICATIONS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW83C is a silicon epitaxial-base NPN
power monolithic Darlington transistor mounted in
Jedec TO-218 plastic package. It is intended for
use in power linear and switching applications.
The complementary type is BDW84C.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
BDW83C
PNP
BDW84C
V
CBO
Collector-Base Voltage (I
E
= 0)
100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
100
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
5
V
I
C
Collector Current
15
A
I
CM
Collector Peak Current
40
A
I
B
Base Current
0.5
A
P
tot
Total Dissipation at T
c
25
o
C
130
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-218
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.96
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
V
CB
= 100 V
V
CB
= 100 V T
case
= 150
o
C
500
5
A
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 40 V
1
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 30 mA
100
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 6 A I
B
= 12 mA
I
C
= 15 A I
B
= 150 mA
2.5
4
V
V
BE(on)
Base-Emitter Voltage
I
C
= 6 A V
CE
= 3 A
2.5
V
h
FE
DC Current Gain
I
C
= 6 A V
CE
=3 V
I
C
= 15 A V
CE
=3 V
750
100
20000
V
f
*
Diode Forward Voltage
I
F
= 10 A
4
V
t
on
t
off
Turn-on Time
Turn-off Time
V
CC
= 30 V I
C
= 10 A
R
B1
= 300
R
B2
= 150
I
B1
= - I
B2
= 40 mA
0.9
6
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
For PNP types voltage and current values are negative.
BDW83C / BDW84C
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1 2 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BDW83C / BDW84C
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BDW83C / BDW84C
4/4
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