BTW 69 (N)
March 1995
SCR
Symbol
Parameter
Value
Unit
IT(RMS)
RMS on-state current
(180
conduction angle)
BTW 69
BTW 69 N
Tc=70
C
Tc=75
C
50
55
A
IT(AV)
Average
on-state
current
(180
conduction angle,single phase circuit)
BTW 69
BTW 69 N
Tc=70
C
Tc=75
C
32
35
A
ITSM
Non repetitive surge peak on-state current
( Tj initial = 25
C )
tp=8.3 ms
525
A
tp=10 ms
500
I2t
I2t value
tp=10 ms
1250
A2s
dI/dt
Critical rate of rise of on-state current
Gate supply : IG = 100 mA diG/dt = 1 A/
s
100
A/
s
Tstg
Tj
Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125
C
C
Tl
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
230
C
TOP 3
(Plastic)
K
A
G
.
HIGH SURGE CAPABILITY
.
HIGH ON-STATE CURRENT
.
HIGH STABILITY AND RELIABILITY
.
BTW 69 Serie :
INSULATED VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
DESCRIPTION
Symbol
Parameter
BTW 69
BTW 69 / BTW 69 N
Unit
200
400
600
800
1000
1200
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125
C
200
400
600
800
1000
1200
V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTW 69 (N) Family of Silicon Controlled Recti-
fiers uses a high performance glass passivated
technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
1/5
GATE CHARACTERISTICS (maximum values)
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
50
C/W
Rth (j-c) DC Junction to case for DC
BTW 69
0.9
C/W
BTW 69 N
0.8
Symbol
Test Conditions
Value
Unit
BTW 69
BTW 69 N
IGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
80
mA
VGT
VD=12V
(DC)
RL=33
Tj=25
C
MAX
1.5
V
VGD
VD=VDRM RL=3.3k
Tj= 125
C
MIN
0.2
V
tgt
VD=VDRM IG = 200mA
dIG/dt = 1.5A/
s
Tj=25
C
TYP
2
s
IL
IG= 1.2 IGT
Tj=25
C
TYP
50
mA
IH
IT= 500mA
gate open
Tj=25
C
MAX
150
mA
VTM
BTW 69
ITM= 100A
BTW 69 N ITM= 110A
tp= 380
s
Tj=25
C
MAX
1.9
2.0
V
IDRM
IRRM
VDRM Rated
VRRM Rated
Tj=25
C
MAX
0.02
mA
Tj= 125
C
6
dV/dt
Linear slope up to
VD=67%VDRM
gate open
VDRM
800V
VDRM
1000V
Tj= 125
C
MIN
500
250
V/
s
tq
VD=67%VDRM
ITM= 110A
VR= 75V
dITM/dt=30 A/
s
dVD/dt= 20V/
s
Tj= 125
C
TYP
100
s
PG (AV) = 1W
PGM = 40W (tp = 20
s)
IFGM = 8A (tp = 20
s)
VRGM = 5 V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
BTW 69 (N)
2/5
Fig.3 : Maximum average power dissipation versus
average on-state current (BTW 69 N).
Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 69 N).
Fig.1 : Maximum average power dissipation versus
average on-state current (BTW 69).
Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTW 69).
Package
IT(RMS)
VDRM / VRRM
Sensitivity Specification
A
V
BTW
BTW 69
(Insulated)
50
200
X
400
X
600
X
800
X
1000
X
1200
X
BTW 69 N
(Uninsulated)
55
600
X
800
X
1000
X
1200
X
BTW 69 (N)
3/5
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
Fig.9 :
Non repetitive surge peak on-state current
versus number of cycles.
Fig.5
:
Average
on-state
current
versus
case
temperature (BTW 69).
1E-3
1E-2
1E-1
1E +0
1 E+1
1 E+2
1 E +3
0.01
0.10
1.00
Zth/Rth
Zth( j-c)
Zt h( j-a)
tp( s)
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.6
:
Average
on-state
current
versus
case
temperature (BTW 69 N).
Fig.10 : Non repetitive surge peak on-state current for a
sinusoidal
pulse
with
width
:
t
10
ms,
and
corresponding value of I2t.
BTW 69 (N)
4/5
Fig11 : On-state characteristics (maximum values).
Cooling method : C
Marking : type number
Weight : 4.7 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
H
R 4.6
C
A
G
D
B
P
N
N
L
M
J
I
REF.
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
A
15.10
15.50
0.594
0.611
B
20.70
21.10
0.814
0.831
C
14.30
15.60
0.561
0.615
D
16.10
16.50
0.632
0.650
G
3.40
-
0.133
-
H
4.40
4.60
0.173
0.182
I
4.08
4.17
0.161
0.164
J
1.45
1.55
0.057
0.062
L
0.50
0.70
0.019
0.028
M
2.70
2.90
0.106
0.115
N
5.40
5.65
0.212
0.223
P
1.20
1.40
0.047
0.056
PACKAGE MECHANICAL DATA
TOP 3 Plastic
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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BTW 69 (N)
5/5
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