BU406
SILICON NPN SWITCHING TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
HORIZONTAL DEFLECTION FOR
MONOCHROME TV
DESCRIPTION
The BU406 is a silicon epitaxial planar NPN
transistor in Jedec TO-220 plastic package.
It is a fast switching device for use in horizontal
deflection output stages of large screens MTV
receivers with 110
o
CRT.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-Base Voltage (I
E
= 0)
400
V
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5 V)
400
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
200
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
7
A
I
CM
Collector Peak Current (repetitive)
10
A
I
CM
Collector Peak Current (t
p
= 10 ms)
15
A
I
B
Base Current
4
A
P
tot
Total Dissipation at T
c
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
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THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
2.08
o
C/W
R
thj-amb
Thermal Resistance Junction-ambient Max
70
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
=400 V
V
CE
=250 V T
ca se
= 150
o
C
V
CE
=250 V
5
100
1
mA
A
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 6 V
1
mA
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
1
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 5 A I
B
= 0.5 A
1.2
V
f
T
Transition-Frequency
I
C
= 0.5 A V
CE
= 10V
10
MHz
t
off
Turn-off Time
I
C
= 5 A I
Bend
= 0.5 A
0.75
s
I
s/b
Second Breakdown
Collector Current
V
CE
= 40 V t = 10 ms
4
A
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
BU406
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BU406
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BU406
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