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Электронный компонент: BU505

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BU505
HIGH VOLTAGE NPN MULTIEPITAXIAL
FAST-SWITCHING TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BU505 is a high voltage NPN fastswitching
transistor designed to be used in lighting
application, like electronic ballas for fluorescent
lamps.
Its characteristics make it also ideal for power
supplies.
INTERNAL SCHEMATIC DIAGRAM
July 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
700
V
I
C
Collector Current
2.5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
4
A
I
B
Base Current
1
A
I
BM
Base Peak Current (t
p
< 5 ms)
2
A
P
tot
Total Dissipation at T
c
25
o
C
75
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.67
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
0.15
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-emitter
Sustaining Voltage
I
C
= 100 mA L = 25mH
700
V
V
CE(sat)
Collector-emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.9 A
5
V
V
BE(sat)
Base-emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.9 A
1.3
V
I
s/b
Second Breakdown
Current
V
CE
= 120 V t = 200
s
2
A
t
s
Storage Time
V
Clamp
= 250V I
C
= 2 A
I
B1
= 0.7 A V
be(off)
= -5V
R
bb
= 0 L = 200
H
2
350
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
BU505
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BU505
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BU505
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