BU806
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
NPN DARLINGTONS
s
LOW BASE-DRIVE REQUIREMENTS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
s
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The devices are silicon epitaxial planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110
o
CRT video displays.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BU806
BU807
V
CBO
Collector-base Voltage (I
E
= 0)
400
330
V
V
CEV
Collector-emitter Voltage (V
BE
= -6V)
400
330
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
200
150
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
6
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current
15
A
I
DM
Damper Diode Peak Forward Current
10
A
I
B
Base Current
2
A
P
tot
Total Power Dissipation at T
ca se
<
25
o
C
60
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
for BU807 V
CE
= 330 V
for BU806 V
CE
= 400 V
100
100
A
A
I
CEV
Collector Cut-off
Current (V
BE
= -6V)
for BU807 V
CE
= 330 V
for BU806 V
CE
= 400 V
100
100
A
A
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 6 V
3.5
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 100 mA for BU807
for BU806
150
200
V
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 5A I
B
= 50mA
1.5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5A I
B
= 50mA
2.4
V
V
F
Damper Diode
Forward Voltage
I
F
= 4A
2
V
t
on
t
off
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Turn-off Time
Storage Time
Fall Time
I
C
= 5 A V
CC
= 100 V
I
B1
= 50 mA I
B2
= -500 mA
0.35
0.4
0.55
0.2
1
s
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle < 1.5 %
BU806 / BU807
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BU806 / BU807
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved
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BU806 / BU807
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