BUF405A
BUF405AFP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
HIGH SWITCHING SPEED NPN POWER
TRANSISTORS
s
EASY TO DRIVE
s
HIGH VOLTAGE FOR OFF-LINE
APPLICATIONS
s
100 KHz SWITCHING SPEED
s
LOW COST DRIVE CIRCUITS
s
LOW DYNAMIC SATURATION
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR DRIVERS
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors
are
specially designed
for
high
reliability industrial and professional power driving
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuits at up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Un it
BUF405A
BUF405AF P
V
CEV
Collector-Emitter Voltage (V
BE
= -1. 5 V)
1000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
7. 5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
15
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
< 5 ms)
4. 5
A
P
tot
T otal Dissipat ion at T
c
= 25
o
C
80
39
W
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max O peration Junction T emperat ure
150
o
C
1
2
3
TO-220
TO-220FP
1
2
3
1/6
THERMAL DATA
T O-220
TO-220F P
R
t hj-ca se
Thermal Resistance Junction-Case
Max
1. 56
3.2
o
C/ W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CER
Collector Cut -of f
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.1
0.5
mA
mA
I
CEV
Collector Cut -of f
Current (I
B
= 0)
V
CE
= V
CEV
V
BE
= -1.5 V
V
CE
= V
CEV
V
BE
= -1.5 V T
c
=100
o
C
0.1
0.5
mA
mA
I
EBO
Emitt er Cut -of f Current
(I
C
= 0)
V
BE
= 5 V
1
mA
V
CEO(sus )
Collector-Emit ter
Sustaining Voltage
I
C
= 200 mA
L = 25 mH
450
V
V
EBO
Emitt er Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 2. 5 A
I
B
= 0.25 A
I
C
= 2. 5 A
I
B
= 0.25 A
T
c
=100
o
C
I
C
= 5 A
I
B
= 1 A
I
C
= 5 A
I
B
= 1 A
T
c
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 2. 5 A
I
B
= 0.25 A
I
C
= 2. 5 A
I
B
= 0.25 A
T
c
=100
o
C
I
C
= 5 A
I
B
= 1 A
I
C
= 5 A
I
B
= 1 A
T
c
=100
o
C
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-stat e
Collector Current
V
CC
= 300 V
R
C
= 0
t
p
= 3
s
I
B1
= 0.375 A
T
j
=25
o
C
I
B1
= 0.375 A
T
j
=100
o
C
I
B1
= 1.5 A
T
j
=100
o
C
30
60
40
A
/
s
A
/
s
A
/
s
V
CE
(3
s)
Collector-Emit ter
Dynamic Voltage
V
CC
= 300 V
R
C
= 120
I
B1
= 0.375 A
T
j
=25
o
C
T
j
=100
o
C
2.1
8
V
V
V
CE
(5
s)
Collector-Emit ter
Dynamic Voltage
V
CC
= 300 V
R
C
= 120
I
B1
= 0.375 A
T
j
=25
o
C
T
j
=100
o
C
1.1
4
V
V
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 2. 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 2.4
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
0.8
0. 05
0. 08
s
s
s
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 2. 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 2.4
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
T
j
=100
o
C
1.8
0.1
0.18
s
s
s
V
CEW
Maximum Collector
Emitt er Voltage
without Snubber
IC = 2.5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 2.4
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 2. 5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0. 6
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
1.5
0. 04
0. 07
s
s
s
BUF405A / BUF405AFP
2/6
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 2. 5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.6
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
T
j
=100
o
C
3
0.15
0.25
s
s
s
V
CEW
Maximum Collector
Emitt er Voltage
without Snubber
IC = 2.5 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.6
V
c la mp
= 400 V
I
B1
= 0.25 A
L = 1 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= -5 V
R
BB
= 2.4
V
c la mp
= 400 V
I
B1
= 1 A
L = 0. 5 mH
1.9
0. 06
0. 12
s
s
s
t
s
t
f
t
c
INDUCTIVE LO AD
St orage Time
Fall Time
Cross O ver T ime
I
C
= 5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
=2. 4
V
c la mp
= 400 V
I
B1
= 1 A
L = 0. 5 mH
T
j
=100
o
C
3.2
0.12
0.3
s
s
s
V
CEW
Maximum Collector
Emitt er Voltage
without Snubber
ICWof f = 7.5 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 2.4
L = 0. 33 mH
I
B1
= 1.5 A
T
j
=125
o
C
400
V
Pulsed: Pulse duration = 300
s, duty cycle < 1.5 %
Turn-on Switching Test Circuit
Turn-off Switching Test Circuit
1 F ast electronic switc h
2 Non-induct ive Resist or
3 F ast recovery rect ifier
1 Fast electronic switch
2 Non-inductive Resistor
BUF405A / BUF405AFP
3/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BUF405A / BUF405AFP
4/6
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
3
3.2
0.118
0.126
L2
A
B
D
E
H
G
L6
F
L3
G1
1 2 3
F2
F1
L7
L4
TO-220FP MECHANICAL DATA
BUF405A / BUF405AFP
5/6
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