BUF420
BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF420 and BUF420M are manufactured
using
High
Voltage
Multi
Epitaxial
Planar
technology for high switching speeds and high
voltage capacity. They use a Cellular Emitter
structure with planar edge termination to enhance
switching speeds while maintaining a
wide
RBSOA.
The
BUF
series
is
designed for
use
in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Valu e
Un it
V
CEV
Collect or-Emitter Volt age (V
BE
= -1.5 V)
850
V
V
CEO
Collect or-Emitter Volt age (I
B
= 0)
450
V
V
EBO
Emitter-Base Volt age (I
C
= 0)
7
V
I
C
Collect or Current
30
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
60
A
I
B
Base Current
6
A
I
BM
Base Peak Current (t
p
< 5 ms)
9
A
T O-218
TO -3
P
tot
T otal Dissipation at T
c
= 25
o
C
200
200
W
T
s tg
Storage Temperature
-65 to 150
o
C
T
j
Max O perat ion Junction Temperat ure
150
o
C
1
2
3
TO-218
TO-3
(version "R")
1
2
For TO-3 :
C = Tab
E = Pin2.
1/7
THERMAL DATA
T O-218
TO-3
R
t hj-ca se
Thermal Resistance Junction-Case
Max
0. 63
0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CER
Collect or Cut-off
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.2
1
mA
mA
I
CEV
Collect or Cut-off
Current (I
B
= 0)
V
CE
= V
CEV
V
BE
= -1.5 V
V
CE
= V
CEV
V
BE
= -1.5 V T
c
=100
o
C
0.2
1
mA
mA
I
EBO
Emitt er Cut-off Current
(I
C
= 0)
V
BE
= 5 V
1
mA
V
CEO(sus )
Collect or-Emitter
Sustaining Voltage
I
C
= 200 mA
L = 25 mH
450
V
V
EBO
Emitt er Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 10 A
I
B
= 1 A
I
C
= 10 A
I
B
= 1 A
T
c
=100
o
C
I
C
= 20 A
I
B
= 2 A
I
C
= 20 A
I
B
= 2 A
T
c
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 10 A
I
B
= 1 A
I
C
= 10 A
I
B
= 1 A
T
c
=100
o
C
I
C
= 20 A
I
B
= 2 A
I
C
= 20 A
I
B
= 2 A
T
c
=100
o
C
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collect or Current
V
CC
= 300 V
R
C
= 0
t
p
= 3
s
I
B1
= 1.5 A
T
j
=25
o
C
I
B1
= 1.5 A
T
j
=100
o
C
I
B1
= 6 A
T
j
=100
o
C
70
150
100
A
/
s
A
/
s
A
/
s
V
CE
(3
s)
Collect or-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 60
I
B1
= 1.5 A
T
j
=25
o
C
I
B1
= 1.5 A
T
j
=100
o
C
2.1
8
V
V
V
CE
(5
s)
Collect or-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 60
I
B1
= 1.5 A
T
j
=25
o
C
I
B1
= 1.5 A
T
j
=100
o
C
1.1
4
V
V
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 0. 6
V
c la mp
= 400 V
I
B1
= 0.5 A
L = 0.25 mH
1
0. 05
0. 08
s
s
s
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 0. 6
V
c la mp
= 400 V
I
B1
= 1 A
L = 0.25 mH
T
j
=100
o
C
2
0.1
0.18
s
s
s
V
CEW
Maximum Collect or
Emitt er Volt age
without Snubber
I
C
= 10 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 0. 6
V
c la mp
= 400 V
I
B1
= 1 A
L = 0.25 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0. 15
V
c la mp
= 400 V
I
B1
= 1 A
L = 0.25 mH
1.5
0. 04
0. 07
s
s
s
BUF420 / BUF420M
2/7
ELECTRICAL CHARACTERISTICS (continued)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 10 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.15
V
c la mp
= 400 V
I
B1
= 1 A
L = 0.25 mH
T
j
=100
o
C
3
0.15
0.25
s
s
s
V
CEW
Maximum Collect or
Emitt er Volt age
without Snubber
I
C
= 10 A
V
CC
= 50 V
V
BB
= 0
R
BB
= 0.15
V
c la mp
= 400 V
I
B1
= 1 A
L = 0.25 mH
T
j
=125
o
C
500
V
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 20 A
V
CC
= 50 V
V
BB
= -5 V
R
BB
=0.6
V
c la mp
= 400 V
I
B1
= 4 A
L = 0.12 mH
2.2
0. 06
0. 12
s
s
s
t
s
t
f
t
c
St orage Time
Fall T ime
Cross Over T ime
I
C
= 20 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 0. 6
V
c la mp
= 400 V
I
B1
= 4 A
L = 0.12 mH
T
j
=125
o
C
3.5
0.12
0.3
s
s
s
V
CEW
Maximum Collect or
Emitt er Volt age
without Snubber
I
CW off
= 30 A
V
CC
= 50 V
V
BB
= - 5 V
R
BB
= 0. 6
L = 0.08 mH
I
B1
= 6 A
T
j
=125
o
C
400
V
Figure 1: Turn-on Switching Test Circuit
Figure 2: Turn-off Switching Test Circuit
1) Fast electronic switch
2) Non inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non inductive Resistor
BUF420 / BUF420M
3/7
Turn-off SwitchingTest Waveforms (inductive load).
Forward Biased Safe Operating Areas.
Reverse Biased Safe Operating Area
Storage Time Versus Pulse Time.
Turn-on Switching Test Waveforms.
BUF420 / BUF420M
4/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1
2
3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUF420 / BUF420M
5/7
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