BUF420M
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
VERY HIGH SWITCHING SPEED
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
MOTOR CONTROL
DESCRIPTION
The BUF420M is manufactured using High
Voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capacity. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
The BUF series is designed for use in
high-frequency power supplies and motor control
applications.
INTERNAL SCHEMATIC DIAGRAM
March 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -1.5V)
850
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current (t
p
< 5 ms)
60
A
I
B
Base Current
6
A
I
BM
Base Peak Current (t
p
< 5 ms)
9
A
P
tot
Total Dissipation at T
c
= 25
o
C
275
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1
2
TO-3
(version "R")
1/8
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
V
CE
= 850 V
V
CE
= 850 V T
C
= 100
o
C
0.2
1
mA
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 850 V
V
CE
= 850 V T
C
= 100
o
C
0.2
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 200 mA L = 25 mH
450
V
V
EBO
Emitter Base Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 10A I
B
= 1 A
I
C
= 10 A I
B
= 1 A T
C
=100
o
C
I
C
= 20 A I
B
= 4 A
I
C
= 20 A I
B
= 4 A T
C
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 10A I
B
= 1 A
I
C
= 10 A I
B
= 1 A T
C
=100
o
C
I
C
= 20 A I
B
= 4 A
I
C
= 20 A I
B
= 4 A T
C
=100
o
C
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collector Current
V
CC
= 300 V R
C
= 0 t
p
= 3
s
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
I
B1
= 6 A T
C
=100
o
C
70
150
100
A
/
s
A
/
s
A
/
s
V
CE
(3
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
2.1
8
V
V
V
CE
(5
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V R
C
= 60
I
B1
= 1.5 A T
C
=25
o
C
I
B1
= 1.5 A T
C
=100
o
C
1.1
4
V
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
1
0.05
0.08
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH T
C
=100
o
C
2
0.1
0.18
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 10 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
I
B1
= 1 A L = 0.25 mH
T
C
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH
1.5
0.04
0.07
s
s
s
BUF420M
2/8
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
V
clamp
= 400 V I
B1
= 1 A
L = 0.25 mH T
C
=100
o
C
3
0.15
0.25
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
C
= 10 A V
CC
= 50 V
V
BB
= 0 R
BB
= 0.15
I
B1
= 1 A L = 0.25 mH
T
C
=125
o
C
500
V
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 20 A V
CC
= 50 V
V
BB
= -5 V R
BB
=0.6
V
clamp
= 400 V I
B1
= 4 A
L = 0.12 mH
2.2
0.06
0.12
s
s
s
t
s
t
f
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Cross Over Time
I
C
= 20 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
V
clamp
= 400 V I
B1
= 4 A
L = 0.12 mH T
C
=125
o
C
3.5
0.12
0.3
s
s
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
I
CWoff
= 30 A V
CC
= 50 V
V
BB
= - 5 V R
BB
= 0.6
L = 0.12 mH I
B1
= 6 A
T
C
=125
o
C
400
V
BUF420M
3/8
DC Current Gain
Collector Emitter Saturation Voltage
Forward Biased Safe Operating Area
DC Current Gain
Base Emitter Saturation Voltage
Reverse Biased Safe Operating Area
BUF420M
4/8
Storage Time Versus Pulse Time.
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
BUF420M
5/8
Turn-off Switching Test Waveforms
(inductive load).
Turn-on Switching Test Waveforms.
BUF420M
6/8
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.7 0.460
B
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9 0.429
N
16.9 0.665
P
26.2
1.031
R
3.88
4.09
0.152
0.161
U
39.50
1.555
V
30.10
1.185
E
B
R
C
D
A
P
G
N
V
U
O
P003N
TO-3 (version R) MECHANICAL DATA
BUF420M
7/8
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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BUF420M
8/8
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