BUL1102E
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand a high collector current
level during Breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
March 2003
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1100
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
12
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current (t
p
<5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
TO-220
1/6
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1.78
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1100 V
100
A
I
EBO
Emitter Cut-off Current
(I
B
= 0)
V
EB
= 12 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
450
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 400 mA
1.5
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 400 mA
1.5
V
h
FE
DC Current Gain
I
C
= 250 mA V
CE
= 5 V
I
C
= 2 A V
CE
= 5 V
35
12
70
20
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2.5 A V
CC
= 250 V
I
B1
= 0.5 A I
B2
= 1 A
T
P
= 30
s (see figure 2)
2.5
300
s
ns
E
ar
Avalanche Energy
L = 2 mH C = 1.8 nF
I
BR
2.5A 25
o
C < T
C
<125
o
C
(see figure 1)
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL1102E
2/6
DC Current Gain
Collector Emitter Saturation Voltage
Switching Time Resistive Load
DC Current Gain
Base Emitter Saturation Voltage
Switching Time Inductive Load
BUL1102E
3/6
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