BUL118
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
May 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collector-Emit ter Volt age (V
BE
= 0)
700
V
V
CEO
Collector-Emit ter Volt age (I
B
= 0)
400
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0, I
B
<1.5A, t
p
<10
s, Tj < 150
o
C)
BV
EBO
V
I
C
Collector Current
3
A
I
CM
Collector Peak Current (t
p
< 5 ms)
6
A
I
B
Base Current
1.5
A
I
BM
Base Peak Current (t
p
< 5 ms)
3
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
60
W
T
stg
St orage Temperature
-65 to 150
o
C
1
2
3
TO-220
1/7
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
2.08
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= -1.5 V)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
A
A
BV
EBO
Emitt er-Base
Breakdown Volt age
(I
C
=0)
I
E
= 10 mA
9
18
V
V
CEO (sus)
Collector-Emit ter
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
400
V
I
CEO
Collector Cut -Of f
Current (I
B
= 0)
V
CE
= 400 V
250
A
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 0. 5 A
I
B
= 0.1 A
I
C
= 1 A
I
B
= 0. 2 A
I
C
= 2 A
I
B
= 0. 4 A
0.5
1
1.3
V
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 0. 5 A
I
B
= 0.1 A
I
C
= 1 A
I
B
= 0. 2 A
I
C
= 2 A
I
B
= 0. 4 A
1.0
1.2
1.3
V
V
V
h
F E
DC Current Gain
I
C
= 10 mA
V
CE
= 5 V
I
C
= 0. 5 A
V
CE
= 5 V
Group A
Group B
I
C
= 2 A
V
CE
= 5 V
10
10
18
8
22
40
t
r
t
s
t
f
RESI STIVE LO AD
Resistive T ime
St orage Time
Fall Time
V
CC
= 125 V
I
C
= 1 A
I
B1
= 0.2 A
I
B2
= -0.2 A
T
p
= 30
s
(see fig.2)
0.4
3.2
0. 25
0.7
4.5
0.4
s
s
s
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 1 A
I
B1
= 0.2 A
V
BEoff
= -5 V
R
BB
= 0
V
c la mp
= 200 V
L = 50mH
(see fig.1)
0.8
0. 16
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
BUL118
2/7
Safe Operating Areas
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BUL118
3/7
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
BUL118
4/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast elect ronic switch
2) Non-induct ive Resistor
3) Fast recovery rectif ier
1) Fast elect ronic switch
2) Non-induct ive Resistor
BUL118
5/7
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