BUL138
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERIZED AT 125
o
C
APPLICATIONS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
May 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collector-Emit ter Volt age (V
BE
= 0)
800
V
V
CEO
Collector-Emit ter Volt age (I
B
= 0)
400
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
< 5 ms)
10
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
< 5 ms)
4
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
80
W
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperat ure
150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V
T
j
= 125
o
C
100
500
A
A
I
CEO
Collector Cut -of f
Current (I
B
= 0)
V
CE
= 400 V
250
A
V
CEO (sus)
Collector-Emit ter
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
400
V
V
EBO
Emitt er-Base Voltage
I
E
= 10 mA
9
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.6 A
I
C
= 4 A
I
B
= 1 A
I
C
= 5 A
I
B
= 1 A
0.7
0.5
0.7
1
1
V
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.6 A
1.1
1.3
1.5
V
V
V
h
F E
DC Current Gain
I
C
= 2 A
V
CE
= 5 V
I
C
= 10 mA
V
CE
= 5 V
8
10
40
t
s
RESI STIVE LO AD
St orage Time
I
C
= 2 A
I
B1
= -I
B2
= 0. 4 A
V
CC
= 250 V
2. 4
3.5
s
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
0.7
50
1.4
100
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0.4 A
V
BE(of f)
= -5V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1
75
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL138
2/6
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuits
1) F ast elect ronic switch
2) Non-inductive Resistor
3) F ast recovery rectifier
BUL138
4/6
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