BUL312FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERIZED AT 125
o
C
s
LARGE RBSOA
s
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS
s
HORIZONTAL DEFLECTION FOR TV
s
SMPS
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The BUL312FP is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
March 2004
TO-220FP
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1150
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
500
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
<5 ms)
10
A
I
B
Base Current
3
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
tot
Total Dissipation at Tc = 25
o
C
36
W
V
isol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
1500
V
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/6
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
3.5
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1150 V
V
CE
= 1150 V T
j
= 125
o
C
1
2
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 500 V
250
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA L= 25 mH
500
V
V
EBO
Emitter-Base Voltage
(I
C
= 0)
I
E
= 10 mA
10
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
0.5
0.7
1.1
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 2 A I
B
= 0.4 A
I
C
= 3 A I
B
= 0.6 A
1
1.1
1.2
V
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 3 A V
CE
= 2.5 V
8
8
13.5
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(o ff)
= -5 V R
BB
= 0
V
CL
= 250 V L = 200
H
(see fig. 1)
1.2
80
1.9
160
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A I
B1
= 0.4 A
V
BE(o ff)
= -5V R
BB
= 0
V
CL
= 250 V L = 200
H
T
j
= 125
o
C (see fig. 1)
1.8
150
s
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL312FP
2/6
(1) Fast electronic switch
(2) Non-inductive Resistor
(3) Fast recovery rectifier
Reverse Biased SOA
Figure 1: Inductive Load Switching Test
Circuit
BUL312FP
4/6
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