BUL57
BUL57FP
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
STMicroelectronics PREFERRED
SALESTYPES
s
NPN TRANSISTORS
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERIZED AT 125
o
C
s
LARGE RBSOA
s
TO-220FP FULLY ISOLATED PACKAGE
(U.L. COMPLIANT)
APPLICATIONS:
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi
Epitaxial
Planar
technology
for
high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
BUL57
BUL57FP
V
CES
Collector-Emit ter Volt age (V
BE
= 0)
700
V
V
CEO
Collector-Emit ter Volt age (I
B
= 0)
400
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
< 5 ms)
16
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
< 5 ms)
7
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
85
35
W
T
stg
St orage Temperature
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperat ure
150
o
C
1
2
3
TO-220
TO-220FP
1
2
3
1/7
THERMAL DATA
TO-220
TO-220F P
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1.47
62.5
3.5
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collector Cut -of f
Current (V
BE
= 0)
V
CE
= 700 V
V
CE
= 700 V
T
j
= 125
o
C
100
500
A
A
I
CEO
Collector Cut -of f
Current (I
B
= 0)
V
EC
= 400 V
250
A
V
CEO (sus)
Collector-Emit ter
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
400
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE(sat )
Collector-Emit ter
Saturation Voltage
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.6 A
I
C
= 4 A
I
B
= 0.8 A
I
C
= 5 A
I
B
= 1 A
I
C
= 8 A
I
B
= 2 A
2
0.65
0.75
1.2
2
V
V
V
V
V
V
BE(s at)
Base-Emitt er
Saturation Voltage
I
C
= 2 A
I
B
= 0.4 A
I
C
= 5 A
I
B
= 1 A
1.2
1.6
V
V
h
F E
DC Current Gain
I
C
= 2 A
V
CE
= 5 V
I
C
= 4 A
V
CE
= 5 V
I
C
= 10 mA
V
CE
= 5 V
15
6
8
40
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 3 A
V
CL
= 250 V
I
B1
= 0.6 A
I
B2
= -1.2 A
L = 200
H
1.8
60
2.6
110
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 3 A
V
CL
= 250 V
I
B1
= 0.6 A
I
B2
= -1.2 A
L = 200
H
T
j
= 125
o
C
2.6
110
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 3 A
I
B1
= 0.6 A
V
BE(of f)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
1
54
1.6
100
s
ns
t
s
t
f
INDUCTIVE LO AD
St orage Time
Fall Time
I
C
= 3 A
I
B1
= 0.6 A
V
BE(of f)
= -5V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1.5
90
s
ns
t
s
t
f
RESI STIVE LO AD
St orage Time
Fall Time
V
CC
= 300 V
I
C
= 2 A
I
B1
= 0.4 A
I
B2
= -0.4 A
Tp = 30
s
3
4.2
350
ms
ns
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUL57 / BUL57FP
2/7
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
1) Fast electronic switc h
2) Non-induct ive Resistor
3) Fast recovery Rect ifier
BUL57 / BUL57FP
4/7
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