BUL742A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS
s
FOUR LAMP ELECTRONIC BALLAST FOR:
120 V MAINS IN PUSH-PULL
CONFIGURATION;
277 V MAINS IN HALF BRIDGE CURRENT
FEED CONFIGURATION.
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL742A is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has
an intrinsic ruggedness which enables the
transistor to withstand an high collector current
level during breakdown condition, without using
the transil protection usually necessary in typical
converters for lamp ballast.
INTERNAL SCHEMATIC DIAGRAM
October 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
950
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
2 A, t
p
< 10
s, T
j
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current (t
p
<5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
tot
Total Dissipation at Tc = 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/5
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.78
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 950 V
100
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
250
A
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA L = 25 mH
400
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 1 mA
12
24
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 1 A I
B
= 0.2 A
I
C
= 3.5 A I
B
= 1 A
0.5
1.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 3.5 A I
B
= 1 A
1.5
V
h
FE
DC Current Gain
I
C
= 800 mA V
CE
= 3 V
I
C
= 10 mA V
CE
= 5 V
16
10
40
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
V
CC
= 250 V I
C
= 2.5 A
I
B1
= 0.5 A I
B2
= -1 A
t
p
= 30
s (see figure 2)
0.9
100
s
ns
E
sb
Avalanche Energy
L = 2 mH (see figure 1)
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
Safe Operating Areas
Derating Curve
BUL742A
2/5
Figure 1: Energy Rating Test Circuit
Figure 2: Resistive Load Switching Test Circuit
BUL742A
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
M
2.60
0.102
DIA.
3.75
3.85
0.147
0.151
P011CI
TO-220 MECHANICAL DATA
BUL742A
4/5
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subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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