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April 2003
BUL742C
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
APPLICATIONS:
s
ELECTRONIC BALLAST FOR FLUORESCENT
LIGHTING
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high switching
speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an
intrinsic ruggedness which enables the transistor to
withstand an high collector current level during
breakdown condition, without using the transil
protection usually necessary in typical converters
for lamp ballast.
ABSOLUTE MAXIMUM RATINGS
Ordering Code
Marking
Package / Shipment
BUL742C
BUL742C
TO-220 / Tube
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1050
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage (I
C
= 0, I
B
< 2 A, t
p
< 10 ms)
V
(BR)EBO
V
I
C
Collector Current
4
A
I
CM
Collector Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
< 5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25 C
70
W
T
stg
Storage Temperature
65 to 150
C
T
j
Max. Operating Junction Temperature
150
C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
BUL742C
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
j
= 25 C unless otherwise specified)
* Pulsed: Pulse duration = 300 s, duty cycle = 1.5 %.
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
1.79
62.5
C/W
C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 1050 V
100
A
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= 400 V
250
A
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 1 mA
12
24
V
V
CEO(sus)
*
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
400
V
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 1 A
I
C
= 3.5 A
I
B
= 0.2 A
I
B
= 1 A
0.5
1.5
V
V
V
BE(sat)
*
Base-Emitter
Saturation Voltage
I
C
= 3.5 A
I
B
= 1 A
1.5
V
h
FE
*
DC Current Gain
I
C
= 0.1 A
I
C
= 0.8 A
V
CE
= 5 V
V
CE
= 3 V
48
25
100
50
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 2 A
I
B1
= -I
B2
= 400 mA
V
BB(off)
= -5 V
V
CC
= 125 V
t
p
= 300
s
(See Figure 1)
2.4
350
s
ns
E
ar
Repetitive Avalanche
Energy
L = 2 mH
V
BE
= -5 V
C = 1.8 nF
(See Figure 2)
6
mJ
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BUL742C
Collector-Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Output Characteristics
Safe Operating Area
Derating Curve
BUL742C
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Resistive Load Switching Off Times
Reverse Biased Safe Operating Area
Resistive Load Switching On Times
Base-Emitter Saturation Voltage
Resistive Load Switching Off Times
Resistive Load Switching On Times
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BUL742C
Figure 1: Resistive Load Switching Test Circuit
1) Fast Electronic Switch
2) Non-Inductive Resistor
Figure 2: Energy Rating Test Circuit
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