BUL85D
MEDIUM VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
HIGH RUGGEDNESS
APPLICATIONS
s
110V AC ELECTRONIC TRANSFORMERS
FOR HALOGEN LAMPS UP TO 100 W
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL85D is manufactured using Multi
Epitaxial Planar technology for high switching
speeds and medium voltage capability.
The BUL85D is designed for use in 110V AC
electronic transformers for halogen lamps.
INTERNAL SCHEMATIC DIAGRAM
January 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
500
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
250
V
V
EBO
Emitter-Base Voltage
(I
C
= 0, I
B
< 2.5 A, t
p
< 10
s, T
J
< 150
o
C)
V
(BR)EBO
V
I
C
Collector Current
8
A
I
CM
Collector Peak Current (t
p
< 5 ms)
15
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
< 5 ms)
8
A
P
tot
Total Dissipation at Tc = 25
o
C
80
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/7
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max
1.56
62.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= 500 V
V
CE
= 500 V T
j
= 125
o
C
100
500
A
A
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 9 V
100
A
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 10mA
10
18
V
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA L = 25 mH
250
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.4 A
I
C
= 4 A I
B
= 0.8 A
I
C
= 8 A I
B
= 1.6 A
0.1
0.3
0.6
1.2
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2 A I
B
= 0.4 A
I
C
= 8 A I
B
= 1.6 A
1.1
1.5
V
V
h
FE
DC Current Gain
I
C
= 10 mA V
CE
= 5 V
I
C
= 0.5 A V
CE
= 5 V
I
C
= 14 A V
CE
= 10 V
10
4
60
10
t
s
t
f
RESISTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A V
CC
= 150 V
I
B(on)
= -I
B(off)
= 0.8 A
t
p
30
s (see figure 2)
1.2
1.8
2.4
250
s
ns
t
s
t
f
INDUCTIVE LOAD
Storage Time
Fall Time
I
C
= 4 A V
CL
= 200 V
I
B
= 0.8 A V
BE(off)
= -3 V
R
BB
= 0
t
p
30
s
(see figure 1)
0.7
50
s
ns
V
f
Diode Forward Voltage
I
C
= 5 A
1.5
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUL85D
2/7
Safe Operating Area
DC Current Gain
Collector Emitter Saturation Voltage
Derating Curve
DC Current Gain
Base Emitter Saturation Voltage
BUL85D
3/7
Switching Time Resistive Load
Diode Forward Voltage
Switching Time Inductive Load
Reverse Biased SOA
BUL85D
4/7
Figure 1: Inductive Load Switching Test Circuit.
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
1) Fast electronic switch
2) Non-inductive Resistor
BUL85D
5/7
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