BUL903ED
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
s
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
VERY HIGH SWITCHING SPEED
s
ARCING TEST SELF PROTECTED
APPLICATIONS
s
LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed in order to
operate
without
baker
clamp
and
transil
protection. This enables saving from 2 up to 10
components in the application.
INTERNAL SCHEMATIC DIAGRAM
June 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Uni t
V
CES
Collector-Emit ter Voltage (V
BE
= 0)
900
V
V
CEO
Collector-Emit ter Voltage (IB = 0)
400
V
V
EBO
Emitter-Base Voltage (IC = 0)
7
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current (t
p
<5 ms)
8
A
I
B
Base Current
2
A
I
BM
Base Peak Current (t
p
<5 ms)
4
A
P
t ot
Tot al Dissipation at T c = 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. O perat ing Junction Temperature
150
o
C
1
2
3
TO-220
1/6
THERMAL DATA
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
1. 8
62. 5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CES
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 900 V
1
mA
I
EBO
Base-Emitt er Leakage
Current
V
EB
= 7 V
100
A
V
CEO (sus)
Collect or-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 10 mA
L = 25 mH
400
V
V
CE(sat )
Collect or-Emitter
Saturat ion Voltage
I
C
= 1 A
I
B
= 0.15 A
1.0
V
V
BE(s at)
Base-Emitt er
Saturat ion Voltage
I
C
= 0. 1 A
I
B
= 0.05 A
I
C
= 0. 5 A
I
B
= 0.1 A
I
C
= 2. 0 A
I
B
= 0.4 A
1.0
1.1
1.2
V
V
V
h
FE
DC Current G ain
I
C
= 5 mA
V
CE
= 10 V
I
C
= 0. 5 A
V
CE
= 3 V
8
20
V
F
Parallel Diode Forward
Voltage
I
F
= 3 A
1.2
V
t
d
t
r
t
s
t
f
RESI STIVE LO AD
Delay Time
Rise Time
St orage Time
Fall T ime
V
CC
= 125 V
I
C
= 0.7 A
I
B1
= 0.05 A
I
B2
= 0.4 A
t
p
= 300
s
0.2
1.0
0.8
0.25
s
s
s
s
t
d
t
r
t
s
t
f
RESI STIVE LO AD
Delay Time
Rise Time
St orage Time
Fall T ime
V
CC
= 125 V
I
C
= 0.5 A
I
B1
= 0.045 A
I
B2
= 0.5 A
t
p
= 300
s
0.2
0.5
0.8
0.5
s
s
s
s
T
RR
Diode Reverse
Recovery Time
I
F
= 1 A
di/dt = 100 A/
s
V
DD
= 30 V
300
ns
E
sb
Avalanche Energy
L = 2 mH
6
mJ
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUL903ED
2/6
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