BUL38D
BULK38D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPES
s
HIGH VOLTAGE CAPABILITY
s
LOW SPREAD OF DYNAMIC PARAMETERS
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
LOW BASE-DRIVE REQUIREMENTS
s
VERY HIGH SWITCHING SPEED
s
FULLY CHARACTERISED AT 125
o
C
s
HIGH RUGGEDNESS
s
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s
ELECTRONIC TRANSFORMERS FOR
HALOGEN LAMPS
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The BUL38D and BULK38D are manufactured
using high voltage Multi Epitaxial Planar
technology for high switching speeds and high
voltage withstand capability.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
December 1994
TO-220
SOT-82
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
BUL38D
BULK38D
V
C ES
Collect or-Emitt er Voltage (V
BE
= 0)
800
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
450
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
9
V
I
C
Collect or Current
5
A
I
CM
Collect or Peak Current (t
p
< 5 ms)
8
A
I
B
Base Current
2
A
I
B M
Base Peak Current (t
p
< 5 ms)
4
A
P
tot
Total Dissipation at T
c
= 25
o
C
70
60
W
T
stg
St orage Temperat ure Range
-65 to 150
o
C
T
j
Max. Operat ing Junction Temperature
150
o
C
1
2
3
1
2
3
1/7
THERMAL DATA
TO220
SOT-82
R
thj-cas e
R
thj- amb
Thermal Resist ance Junct ion-Case
Max
Thermal Resist ance Junct ion-Ambient
Max
1.78
62.5
2.08
80
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
I
CE S
Collect or Cut-off
Current (V
BE
= 0)
V
CE
= 800 V
V
CE
= 800 V
T
j
= 125
o
C
100
500
A
A
I
CEO
Collect or Cut-off
Current (I
B
= 0)
V
CE
= 450 V
250
A
V
CEO(sus)
Collect or-Emitt er
Sustaining Voltage
I
C
= 100 mA
L = 25 mH
450
V
V
EBO
Emitt er-Base Voltage
(I
C
= 0)
I
E
= 10 mA
9
V
V
CE (sat)
Collect or-Emitt er
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
I
C
= 3 A
I
B
= 0.75 A
0.5
0.7
1.1
V
V
V
V
B E(sat)
Base-Emitter
Saturation Voltage
I
C
= 1 A
I
B
= 0.2 A
I
C
= 2 A
I
B
= 0.4 A
1.1
1.2
V
V
h
FE
DC Current Gain
I
C
= 2 A
V
CE
= 5 V
I
C
= 10 mA
V
CE
= 5 V
8
10
t
s
t
f
I NDUCTI VE LOAD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0.4 A
V
BE (off)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
1
55
1.8
100
s
ns
t
s
t
f
I NDUCTI VE LOAD
St orage Time
Fall Time
I
C
= 2 A
I
B1
= 0.4 A
V
BE (off)
= -5 V
R
BB
= 0
V
CL
= 250 V
L = 200
H
T
j
= 125
o
C
1.3
100
s
ns
V
f
Diode Forward Voltage
I
C
= 2 A
2.5
V
Pulsed: Pulse durati on = 300
s, duty cycle 1.5 %
Safe Operating Areas for TO-220
Safe Operating Areas for SOT-82
BUL38D/BULK38D
2/7
Inductive Fall Time
Inductive Storage Time
RBSOA and Inductive Load Switching Test
Circuit
(1) F ast electroni c swi tch
(2) Non- inducti ve Resistor
(3) F ast recovery recti fier
BUL38D/BULK38D
4/7
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