BUT11A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
FAST SWITCHING SPEED
APPLICATIONS:
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUT11A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-220 plastic package,
particularly intended for switching application.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0 V)
1000
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
9
V
I
C
Collector Current
5
A
I
CM
Collector Peak Current
10
A
I
B
Base Current
2
A
I
BM
Base Peak Current
4
A
P
tot
Total Power Dissipation at T
c
25
o
C
83
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= rated V
CES
at T
case
= 125
o
C
1
2
mA
mA
I
EBO
Emitter Cut-off Current I
C
= 0 V
BE
= 9 V
10
mA
V
CEO(sus)*
Collector-emitter
Sustaining Voltage
I
B (o ff)
= 0 I
C
= 100 mA
450
V
V
CE(sat)*
Collector-emitter
Saturation Voltage
I
C
= 2.5 A I
B
= 0.5 A
1.5
V
V
BE(sat)*
Base-emitter
Saturation Voltage
I
C
= 2.5 A I
B
= 0.5 A
1.3
V
t
on
Turn on Time
I
C
= 2.5 A V
CC
= 250 V
I
B
= I
B2
= 0.5 A
1
s
t
s
Storage Time
4
s
t
f
Fall Time
0.8
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %.
BUT11A
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
TO-220 MECHANICAL DATA
BUT11A
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUT11A
4/4
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