BUT70
HIGH POWER NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s
SWITCHING REGULATORS
s
MOTOR CONTROL
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUT70 is a Multiepitaxial planar NPN
transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V)
200
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
125
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
E(RMS)
Emitter Current
40
A
I
EM
Emitter Peak Current
120
A
I
B
Base Current
8
A
I
BM
Base Peak Current
24
A
P
tot
Total Power Dissipation at T
case
<
25
o
C
200
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operating Junction Temperature
150
o
C
1
2
3
TO-218
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
1
5
mA
mA
I
CEV
Collector Cut-off
Current
V
CE
= V
CEV
V
BE
= -1.5V
V
CE
= V
CEV
V
BE
= - 1.5V T
C
=100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= - 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2A
L = 25 mH
125
V
V
EBO
Emitter-base
Voltage (I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
j
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
j
= 100
o
C
0.9
1.5
0.9
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
j
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
j
= 100
o
C
1.8
1.9
1.4
1.4
V
V
V
V
di
c
/d
t
Rated of Rise of
on-state Collector
Current
V
CC
= 100 V R
C
= 0 I
B1
= 3.5 A
t
p
=3
S T
j
= 100
o
C
140
A/
s
Pulsed: Pulse duration = 300
s, duty cycle < 2 %
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
t
s
t
f
Rise Time
Storage Time
Fall Time
V
CC
= 90 V I
C
= 35 A
V
BB
= -5 V I
B1
= 1.75 A
R
B2
= 1.4
L
C
=0.13 mH T
J
=100
o
C
V
CLAMP
=125V
1.8
0.2
0.35
s
s
s
BUT70
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1 2 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUT70
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUT70
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