BUT70W
HIGH POWER NPN TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s
SWITCHING REGULATORS
s
MOTOR CONTROL
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUT70W is a Multiepitaxial planar NPN
transistor in TO-247 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
February 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V)
200
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
125
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
E(RMS)
Emitter Current
40
A
I
EM
Emitter Peak Current
120
A
I
B
Base Current
8
A
I
BM
Base Peak Current
24
A
P
tot
Total Power Dissipation at T
case
<
25
o
C
200
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max Operating Junction Temperature
150
o
C
1
2
3
TO-247
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.63
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
)
V
CE
= 200 V
V
CE
= 200 V T
C
= 100
o
C
1
5
mA
mA
I
CEV
Collector Cut-off
Current (V
BE
= -1.5V)
V
CE
= 200 V
V
CE
= 200 V T
C
= 100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 0.2 A L = 25 mH
125
V
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
C
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
C
= 100
o
C
0.9
1.5
0.9
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 70 A I
B
= 7 A
I
C
= 70 A I
B
= 7 A T
C
= 100
o
C
I
C
= 35 A I
B
= 1.75 A
I
C
= 35 A I
B
= 1.75 A T
C
= 100
o
C
1.8
1.9
1.4
1.4
V
V
V
V
di
c
/d
t
Rated of Rise of
on-state Collector
Current
V
CC
= 100 V R
C
= 0 I
B1
= 3.5 A
t
p
= 3
s T
C
= 100
o
C
140
A/
s
Pulsed: Pulse duration = 300
s, duty cycle < 2 %
INDUCTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
I
C
= 35 A V
CC
= 90 V
V
BB
= -5 V R
B2
= 1.4
B1
= 1.75 A L
C
= 0.15 mH
V
CLAMP
= 125V T
C
= 100
o
C
1.8
0.2
0.35
s
s
s
BUT70W
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
5.3
0.185
0.209
D
2.2
2.6
0.087
0.102
E
0.4
0.8
0.016
0.031
F
1
1.4
0.039
0.055
F3
2
2.4
0.079
0.094
F4
3
3.4
0.118
0.134
G
10.9
0.429
H
15.3
15.9
0.602
0.626
L
19.7
20.3
0.776
0.779
L3
14.2
14.8
0.559
0.582
L4
34.6
1.362
L5
5.5
0.217
M
2
3
0.079
0.118
P025P
TO-247 MECHANICAL DATA
BUT70W
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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BUT70W
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