BUV26
MEDIUM POWER NPN SILICON TRANSISTOR
s
SGS-THOMSON PREFERRED SALESTYPE
s
NPN TRANSISTOR
s
FAST SWITCHING SPEED
s
LOW COLLECTOR EMITTER SATURATION
APPLICATIONS
s
SWITCHING REGULATORS
s
MOTOR CONTROL
DESCRIPTION
The BUV26 is a Multiepitaxial Planar NPN
Transistor in TO-220 package. It is intended for
use in high frequency and efficency converters,
switching regulators and motor control.
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collector-base Voltage (I
E
= 0)
180
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
90
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Emitter Current
14
A
I
CM
Collector Peak Current (t
p
<10ms)
25
A
I
B
Base Current
4
A
I
BM
Base Peak Current (t
p
<10ms)
6
A
P
tot
Total Dissipation at Tc < 25
o
C
85
W
P
tot
Total Dissipation at T
c
< 60
o
C
65
W
T
stg
Storage Temperature
-65 to +175
o
C
T
j
Max. Operating Junction Temperature
175
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 5
0
)
V
CE
= 180V
T
c
= 125
o
C
3
mA
I
CEX
Collector Cut-off
Current
V
CE
= 180V
V
BE
= -1.5V T
c
= 125
o
C
1
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2 A
L = 25mH
90
V
V
EBO
Emitter-Base
Voltage (I
C
= 0)
I
E
= 50mA
7
30
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 6A I
B
= 0.6A
I
C
= 12A I
B
= 1.2A
0.6
1.5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
=12A I
B
= 1.2A
2
V
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
V
CC
= 50V I
C
=12A
V
BE
= - 6V I
B1
= 1.2A
R
BB
= 2.5
0.4
0.45
0.12
0.6
1
0.25
ms
s
s
t
s
t
f
t
s
t
f
INDUCTIVE LOAD
Storage time
Fall Time
Storage Time
Fall Time
V
CC
= 50V I
C
= 12A
V
BE
= - 5V I
B1
= 1.2A
L
B
= - 0.5
H
V
CC
= 50V I
C
= 12 A
V
BE
= - 5V I
B1
= 1.2A
L
B
= - 0.5
H T
j
= 125
o
C
0.5
0.04
2
0.15
s
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %
BUV26
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
1.27
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
BUV26
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
BUV26
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