BUV46
HIGH VOLTAGE NPN POWER TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
HIGH VOLTAGE CAPABILITY
s
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
s
FAST SWITCHING SPEED
APPLICATIONS
s
GENERAL PURPOSE SWITCHING
s
SWITCH MODE POWER SUPPLIES
s
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
DESCRIPTION
The device is a Multiepitaxial Mesa NPN
transistor mounted in TO-220 plastic package. It
is intended for high voltage and fast switching
applications.
INTERNAL SCHEMATIC DIAGRAM
February 2002
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
Collector-Emitter Voltage (V
BE
= 0)
850
V
V
CEX
Collector-Emitter Voltage (V
BE
= -2.5V)
850
V
V
CEO
Collector-Emitter Voltage (I
B
= 0)
400
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
5
A
I
B
Base Current
3
A
P
tot
Total Dissipation at T
C
= 25
o
C
70
W
T
stg
Storage Temperature
-65 to 150
o
C
T
j
Max. Operating Junction Temperature
150
o
C
1
2
3
TO-220
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case Max
1.76
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= 850 V
V
CE
= 850 V T
C
= 125
o
C
0.1
1
mA
mA
I
CEX
Collector Cut-off
Current (V
BE
= -2.5V)
V
CE
= 850 V
V
CE
= 850 V T
C
= 125
o
C
0.3
2
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 7 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
400
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 2.5 A I
B
= 0.5 A
I
C
= 3.5 A I
B
= 0.7 A
1.5
5
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 2.5 A I
B
= 0.5 A
1.3
V
t
on
t
s
t
f
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
I
C
= 2.5 A V
CC
= 150 V
I
B1
= - I
B2
= 0.5 A
1
3
0.8
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUV46
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
M
2.60
0.102
DIA.
3.75
3.85
0.147
0.151
P011CI
TO-220 MECHANICAL DATA
BUV46
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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2002 STMicroelectronics Printed in Italy All Rights Reserved
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BUV46
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