BUV61
HIGH POWER NPN SILICON TRANSISTOR
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
FULLY CHARACTERIZED AT 125
o
C
APPLICATION
s
SWITCHING REGULATORS
s
MOTOR CONTROL
DESCRIPTION
The BUV61 is a Multi-Epitaxial planar NPN
transistor in TO-3 metal case.
It is intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
October 2003
1
2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V)
300
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
200
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
50
A
I
CM
Collector Peak Current
75
A
I
B
Base Current
8
A
I
BM
Base Peak Current
15
A
P
Base
Reverse Bias Base Dissipation
(B.E. junction in avalanche)
2
W
P
tot
Total Power Dissipation at T
case
< 25
o
C
250
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max Operating Junction Temperature
200
o
C
TO-3
(version " S ")
1/5
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= 300 V
V
CE
= 300 V T
C
= 100
o
C
1
5
mA
mA
I
CEV
Collector Cut-off
Current
(V
BE
= -1.5V)
V
CE
= 300V
V
CE
= 300V T
C
=100
o
C
1
4
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 0.2A L = 25 mH
200
V
V
EBO
Emitter-base
Voltage (I
C
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 12.5A I
B
= 0.625A
I
C
= 25A I
B
= 2.5A
I
C
= 40A I
B
= 5A
I
C
= 12.5A I
B
= 0.625A T
j
= 100
o
C
I
C
= 25A I
B
= 2.5A T
j
= 100
o
C
I
C
= 40A I
B
= 5A T
j
= 100
o
C
0.65
0.4
0.6
0.5
0.5
0.75
0.9
0.9
1.2
1.2
1.5
1.9
V
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 25A I
B
= 2.5A
I
C
= 40A I
B
= 5A
I
C
= 25A I
B
= 2.5A T
j
= 100
o
C
I
C
= 40A I
B
= 5A T
j
= 100
o
C
1.05
1.35
1.1
1.35
1.4
1.8
1.7
1.8
V
V
V
V
di
c
/d
t
Rated of Rise of
on-state Collector
Current
V
CC
= 160V R
C
= 0 I
B1
=3.75A
T
j
= 25
o
C
T
j
= 100
o
C
70
60
130
110
A/
s
A/
s
V
CE(2
s)
Collector Emitter
Dynamic Voltage
V
CC
= 160V R
C
= 6.4
I
B1
=2.5A
T
j
= 25
o
C
T
j
= 100
o
C
1.3
1.8
3
5
V
V
V
CE(4
s)
Collector Emitter
Dynamic Voltage
V
CC
= 160V R
C
= 6.4
I
B1
=2.5A
T
j
= 25
o
C
T
j
= 100
o
C
0.95
1.1
2
3
V
V
Pulsed: Pulse duration = 300
s, duty cycle = 2 %
BUV61
2/5
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r
t
s
t
f
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
V
CC
= 160V I
C
= 40A
V
BB
= -5V I
B1
= 5A
R
B2
= 0.5
T
p
= 30
s
0.55
0.6
0.07
0.7
1.2
0.3
s
s
s
t
s
t
f
t
t
t
c
INDUCTIVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V
CC
= 160V V
clamp
= 200V
I
C
= 25A I
B
= 2.5A
V
BB
= -5V R
B2
= 1
L
C
= 0.32mH
0.85
0.06
0.01
0.11
1.9
0.15
0.07
0.3
s
s
s
s
t
s
t
f
t
t
t
c
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
V
CC
= 160V V
clamp
= 200V
I
C
= 25A I
B
= 2.5A
V
BB
= -5V R
B2
= 1
L
C
= 0.32mH T
j
= 100
o
C
1.1
0.08
0.02
0.15
2.4
0.25
0.15
0.5
s
s
s
s
t
s
t
f
t
t
Storage Time
Fall Time
Tail Time in Turn-on
V
CC
= 160V V
clamp
= 200V
I
C
= 25A I
B
= 2.5A
V
BB
= 0 R
B2
= 2.7
L
C
= 0.32mH
1.6
0.7
0.2
s
s
s
t
s
t
f
t
t
Storage Time
Fall Time
Tail Time in Turn-on
V
CC
= 160V V
clamp
= 200V
I
C
= 25A I
B
= 2.5A
V
BB
= 0 R
B2
= 2.7
L
C
= 0.32mH T
j
= 100
o
C
2.7
1
0.3
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle
=
2 %
BUV61
3/5
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
1.47
1.60
0.058
0.063
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
E
B
R
C
D
A
P
G
N
V
U
O
P003O
TO-3 (version S) MECHANICAL DATA
BUV61
4/5
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics All Rights reserved
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BUV61
5/5
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