BUV98V
NPN TRANSISTOR POWER MODULE
s
HIGH CURRENT POWER BIPOLAR MODULE
s
VERY LOW R
th
JUNCTION CASE
s
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
s
ISOLATED CASE (2500V RMS)
s
EASY TO MOUNT
s
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
s
MOTOR CONTROL
s
SMPS & UPS
s
WELDING EQUIPMENT
INTERNAL SCHEMATIC DIAGRAM
September 1997
ISOTOP
Pin 4 not connected
ABSOLUTE MAXIMUM RATINGS
Symbol
Parame ter
Value
Unit
V
CEV
Collector-Emitter Voltage (V
BE
= -5 V)
1000
V
V
CEO(sus)
Collector-Emitter Voltage (I
B
= 0)
450
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current (t
p
= 10 ms)
60
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
= 10 ms)
16
A
P
t ot
Tot al Dissipation at T
c
= 25
o
C
150
W
T
stg
Storage Temperature
-55 to 150
o
C
T
j
Max. Ope ra ting Ju nction Temperature
150
o
C
V
I SO
Insulation Withstand Voltage (AC-RMS)
2500
o
C
1/7
THERMAL DATA
R
thj-ca se
R
t hc-h
Thermal Resistance Ju nction- case
Max
Thermal Resistance Case-heatsin k With Conductive
Grease Applied
Max
0.83
0.05
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collecto r Cu t-of f
Current (R
BE
= 5
)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
1
8
mA
mA
I
CEV
Collecto r Cu t-of f
Current (V
BE
= -5V)
V
CE
= V
CEV
V
CE
= V
CEV
T
j
= 100
o
C
0. 4
4
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
EB
= 5 V
2
mA
V
CEO(SUS)
* Collecto r-Emitter
Sustaining Voltage
I
C
= 0.2 A
L = 25 mH
V
c lamp
= 450 V
450
V
h
FE
DC Current Gain
I
C
= 24 A
V
CE
= 5 V
9
V
CE(sat )
Collecto r-Emitter
Satu ration Vo ltage
I
C
= 20 A
I
B
= 4 A
I
C
= 30 A
I
B
= 8 A
1. 5
3. 5
V
V
V
BE( sat)
Base-Emitter
Satu ration Vo ltage
I
C
= 20 A
I
B
= 4 A
1. 6
V
di
C
/dt
Rate of Rise of
On-state Collector
V
CC
= 3 00 V
R
C
= 0
t
p
= 3
s
I
B1
= 6 A
T
j
= 100
o
C
100
A/
s
V
CE
(3
s)
Colle cto r-Emitter
Dynamic Voltage
V
CC
= 300 V
R
C
= 1 5
I
B1
= 6 A
T
j
= 1 00
o
C
8
V
V
CE
(5
s)
Collector-Emitte r
Dynamic Voltage
V
CC
= 300 V
R
C
= 1 5
I
B1
= 6 A
T
j
= 1 00
o
C
4
V
t
s
t
f
Storage Time
Fall Time
I
C
= 20 A
V
CC
= 50 V
V
BB
= -5 V
L
B
= 1.5
H
V
c lamp
= 300 V I
B1
= 4 A
L = 750
H
T
j
= 100
o
C
5
0. 4
s
s
V
CEW
Maximu m Collector
Emitter Voltage
With ou t Snubber
I
CW off
= 30 A
I
B1
= 6 A
V
BB
= -5 V
V
CC
= 50 V
L = 750
H
L
B
= 15
H
T
j
= 1 25
o
C
350
V
Pulsed: Pulse duration = 300
s, duty cycle 1.5 %
BUV98V
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Safe Operating Areas
Derating Curve
Collector Emitter Saturation Voltage
Thermal Impedance
Collector-emitter Voltage Versus
base-emitter Resistance
Base-Emitter Saturation Voltage
BUV98V
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Reverse Biased SOA
Reverse Biased AOA
Switching Times Inductive Load
Foward Biased SOA
Forward Biased AOA
Switching Times Inductive Load Versus
Temperature
BUV98V
4/7
(1) Fast electronics switch
(2) Non-inductive load
Dc Current Gain
Turn-on Switching Test Circuit
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
(3) Fast recovery rectifier
Turn-off Switching Waveforms
BUV98V
5/7
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
0.157
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
0.157
O
7.8
8.2
0.307
0.322
B
E
H
O
N
J
K
L
M
F
A
C
G
D
ISOTOP MECHANICAL DATA
BUV98V
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
BUV98V
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