BUW48
BUW49
HIGH POWER NPN SILICON TRANSISTORS
s
SGS-THOMSON PREFERRED SALESTYPES
s
NPN TRANSISTOR
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
s
VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s
SWITCHING REGULATORS
s
MOTOR CONTROL
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
DESCRIPTION
The BUW48 and BUW49 are Multiepitaxial planar
NPN transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
INTERNAL SCHEMATIC DIAGRAM
July 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BUW48
BUW49
Unit
V
CEV
Collector-emitter Voltage (V
BE
= -1.5V)
120
160
V
V
CEO
Collector-emitter Voltage (I
B
= 0)
60
80
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current
45
40
A
I
B
Base Current
8
6
A
I
BM
Base Peak Current
12
10
A
P
tot
Total Power Dissipation at T
case
<
25
o
C
150
W
T
stg
Storage Temperature
-65 to 175
o
C
T
j
Max Operating Junction Temperature
175
o
C
1
2
3
TO-218
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CEX
Collector Cut-off
Current
V
CE
= V
CEX
V
BE
= -1.5V
V
CE
= V
CEX
V
BE
= -1.5V T
c
=125
o
C
1
3
mA
mA
I
EBO
Emitter Cut-off
Current (I
C
= 0)
V
EB
= 5 V
1
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
I
C
= 0.2A L = 25 mH for BUW48
for BUW49
60
80
V
V
V
EB0
Emitter-base
Voltage (I
c
= 0)
I
E
= 50 mA
7
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 20A I
B
= 2A for BUW48
I
C
= 40A I
B
= 4A for BUW49
I
C
= 15A I
B
= 1.5A for BUW48
I
C
= 30A I
B
= 3A for BUW49
0.6
1.4
0.5
1.2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 40A I
B
= 4A for BUW48
I
C
= 30A I
B
= 3A for BUW49
2.1
2
V
V
f
T
Transition Frequency
I
C
= 1A V
CE
= 15V f = 15 MHz
8
MHz
RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
for BUW48
V
CC
= 60V I
C
= 40A
I
B1
= -I
B2
= 4A
1.2
0.6
0.17
1.5
1.1
0.25
s
s
s
t
s
t
f
Storage Time
Fall Time
for BUW48
V
CC
= 60V I
C
= 40A
I
B1
= -I
B2
= 4A
1.65
0.5
s
s
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
for BUW49
V
CC
= 80V I
C
= 30A
I
B1
= -I
B2
= 4A
0.8
0.6
0.15
1.2
1.1
0.25
s
s
s
t
s
t
f
Storage Time
Fall Time
for BUW49
V
CC
= 80V I
C
= 30A
I
B1
= -I
B2
= 4A
1.65
0.5
s
s
Pulsed: Pulse duration = 300
s, duty cycle < 1.5 %
BUW48 / BUW49
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
16.2
0.637
L3
18
0.708
L5
3.95
4.15
0.155
0.163
L6
31
1.220
R
12.2
0.480
4
4.1
0.157
0.161
R
A
C
D
E
H
F
G
L6
L3
L2
L5
1 2 3
TO-218 (SOT-93) MECHANICAL DATA
P025A
BUW48 / BUW49
3/4
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
BUW48 / BUW49
4/4
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