ChipFind - документация

Электронный компонент: BUX98C

Скачать:  PDF   ZIP
BUX98C
HIGH POWER NPN SILICON TRANSISTOR
s
STMicroelectronics PREFERRED
SALESTYPE
s
NPN TRANSISTOR
s
HIGH VOLTAGE CAPABILITY
s
HIGH CURRENT CAPABILITY
s
FAST SWITCHING SPEED
APPLICATIONS:
s
HIGH FREQUENCY AND EFFICENCY
CONVERTERS
s
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BUX98C is a Silicon Multi Epitaxial Mesa
NPN transistor in Jedec TO-3 metal case,
intended for use in switching and industrial
applications from single and three-phase mains
operations.
INTERNAL SCHEMATIC DIAGRAM
September 2003
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CER
Collector-Emitter Voltage (R
BE
0
)
1200
V
V
CES
Collector-Emitter Voltage (V
BE
= 0)
1200
V
V
CEO
Collector-Emitter Voltage
700
V
V
EBO
Emitter-Base Voltage (I
C
= 0)
7
V
I
C
Collector Current
30
A
I
CM
Collector Peak Current (t
p
< 5 ms)
60
A
I
CMP
Collector Peak Current non Repetitive
80
A
I
B
Base Current
8
A
I
BM
Base Peak Current (t
p
< 5 ms)
30
A
P
tot
Total Dissipation at T
c
= 25
o
C
250
W
T
stg
Storage Temperature
-65 to 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
1
2
TO-3
(version R)
1/4
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 10
)
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
1
8
mA
mA
I
CES
Collector Cut-off
Current (V
BE
= 0 )
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
1
6
mA
mA
I
CEO
Collector Cut-off
Current (I
B
= 0)
V
CE
= V
CEO
2
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
V
CB
= 5 V
2
mA
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
I
C
= 100 mA
700
V
V
CE(sat)
Collector-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 3 A
I
C
= 16 A I
B
= 5 A
I
C
= 20 A I
B
= 8 A
1.5
2
3
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 12 A I
B
= 3 A
I
C
= 20 A I
B
= 8 A
1.6
2
V
V
t
on
t
s
t
f
Turn-on Time
Storage Time
Fall Time
RESISTIVE LOAD
VCC = 250 V I
C
= 12 A
I
B1
= - I
B2
= 3 A
0.5
1.5
0.2
1
3
0.8
s
s
s
Pulsed: Pulse duration = 300
s, duty cycle = 1.5 %
BUX98C
2/4
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.7 0.460
B
0.96
1.10
0.037
0.043
C
1.70
0.066
D
8.7
0.342
E
20.0
0.787
G
10.9 0.429
N
16.9 0.665
P
26.2
1.031
R
3.88
4.09
0.152
0.161
U
39.50
1.555
V
30.10
1.185
E
B
R
C
D
A
P
G
N
V
U
O
P003N
TO-3 (version R) MECHANICAL DATA
BUX98C
3/4
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
2003 STMicroelectronics All Rights reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
BUX98C
4/4